仕様
| 属性 | 値 |
| Package / Case | Tray |
| Part Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR3L |
| Memory Size | 8Gb (1G x 8) |
| Memory Interface | Parallel |
| Clock Frequency | 933 MHz |
| Access Time | 20 ns |
| Voltage - Supply | 1.283V ~ 1.45V |
| Operating Temperature | 0°C ~ 95°C (TC) |
| Mounting Type | Surface Mount |
概要
Description
MT41K1G8SN-107:A is a Micron memory device from the MT41K1G8SN family. It is a 1-Gbit DRAM die organized as x8 (8 data pins). The “-107” denotes a specific speed grade/bin within the family, and the “A” suffix typically indicates a revision or package variant. It is a synchronous DRAM device designed for use on memory buses in embedded systems and consumer electronics, supporting standard DRAM operations (RAS/CAS, active, precharge, auto-refresh) and burst-access modes. The exact interface (DDR2/DDR3/voltage, number of banks, burst length, and packaging) depends on the precise revision; refer to Micron’s MT41K1G8SN-107/A datasheet for the complete electrical and timing specs and application guidance.
Features
MT41K1G8SN-107:A is a Micron DDR3 SDRAM device. Key features include:
- 1 Gbit density (128 MB per device)
- x8 data width
- 8-bank architecture
- 8n prefetch with BL8
- DDR3-1066 MT/s rated (PC3-8500)
- I/O voltage: 1.5 V
- 96-ball FBGA package
- Unbuffered, non-ECC
- ZQ calibration support (per device)
These specs are typical for the MT41K1G8SN family; please refer to the exact datasheet for full electrical/temporal parameters and packaging options.
- 1 Gbit density (128 MB per device)
- x8 data width
- 8-bank architecture
- 8n prefetch with BL8
- DDR3-1066 MT/s rated (PC3-8500)
- I/O voltage: 1.5 V
- 96-ball FBGA package
- Unbuffered, non-ECC
- ZQ calibration support (per device)
These specs are typical for the MT41K1G8SN family; please refer to the exact datasheet for full electrical/temporal parameters and packaging options.
Pinout
- Pin count: 84 pins (FBGA package)
- Function: Micron MT41K1G8SN-107:A is a 1-Gbit, x8-wide synchronous DRAM (SDRAM) device used as memory, providing an 8-bit data path with address/command/control lines and power pins.
- Function: Micron MT41K1G8SN-107:A is a 1-Gbit, x8-wide synchronous DRAM (SDRAM) device used as memory, providing an 8-bit data path with address/command/control lines and power pins.
Manufacturer
- Manufacturer: Micron Technology, Inc.
- What kind of company: An American multinational semiconductor company that designs and manufactures memory and storage technologies (DRAM, NAND flash, SSDs). It is one of the world’s largest memory manufacturers, headquartered in Boise, Idaho.
- What kind of company: An American multinational semiconductor company that designs and manufactures memory and storage technologies (DRAM, NAND flash, SSDs). It is one of the world’s largest memory manufacturers, headquartered in Boise, Idaho.
Application
MT41K1G8SN-107:A is a Micron 1Gbit x8 SDRAM device (DDR3/DDR3L family). Common application areas:
- Desktop and notebook main memory modules (DIMMs/SODIMMs)
- Servers and data-center memory and caching
- Networking equipment (switches, routers)
- Storage controllers and SSD caching
- Embedded, industrial, and medical equipment requiring DRAM
- Graphics cards and compute accelerators needing high-speed memory
- Desktop and notebook main memory modules (DIMMs/SODIMMs)
- Servers and data-center memory and caching
- Networking equipment (switches, routers)
- Storage controllers and SSD caching
- Embedded, industrial, and medical equipment requiring DRAM
- Graphics cards and compute accelerators needing high-speed memory
Package
FBGA (Fine-pitched Ball Grid Array) package.
