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MT48LC4M16A2P-75:G
+BOMIC DRAM 64MBIT PAR 54TSOP II
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メーカーマイクロンテクノロジー株式会社
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メーカー品番 #MT48LC4M16A2P-75:G
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データシート MT48LC4M16A2P-75:G DataSheet
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パッケージ TSOP-54
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在庫状況3554
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Supplier | Micron Technology Inc. |
| Package / Case | Tray |
| Part Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM |
| Memory Size | 64Mb (4M x 16) |
| Memory Interface | Parallel |
| Clock Frequency | 133 MHz |
| Write Cycle Time - Word Page | 15ns |
| Access Time | 5.4 ns |
| Voltage - Supply | 3V ~ 3.6V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
概要
Description
- Capacity/organization: 4,194,304 words × 16 bits ≈ 64 Mb total.
- Interface: synchronous, with multiplexed row/column addresses and a 16‑bit data I/O.
- Supply and speed: typically 3.3V; speed grade -75 indicates about 75 ns access time (roughly a ~66–83 MHz data rate, depending on timing).
- RoHS: the “:G” suffix denotes RoHS-compliant, lead-free packaging.
- Features: auto-refresh, standard SDRAM timing, requires proper initialization sequence from a memory controller.
- Applications: main memory in embedded systems, graphics buffers, or other devices needing a 16-bit wide SDRAM.
For exact pinout, timing parameters, refresh requirements, and package details, consult the Micron MT48LC4M16A2P-75:G datasheet.
Equivalent
Features
- 64 Mb SDRAM, organized as 4M x 16
- Synchronous DRAM with 2 banks
- Burst length 4, sequential burst type; page-mode operation
- Auto precharge for easy burst termination
- Single 3.3V supply; TTL-compatible I/O
- Speed grade -75: rated up to 75 MHz operation
- Automatic refresh support
- RoHS-compliant “-G” package (green/lead-free)
- Temperature range typical for commercial parts (e.g., -40°C to 85°C)
Note: exact CAS latency options and some downstream timing values are controlled by mode registers and device datasheet.
Pinout
- Function: 64 Mbit, 4M × 16-bit Synchronous DRAM (SDRAM) with a 16-bit data bus. Uses multiplexed address lines and standard SDRAM control pins. Signals include: A0–A12/ multiplexer, BA0/BA1 (bank selects), CS#, RAS#, CAS#, WE#, CK, CK#, DQ0–DQ15 (data I/O), DQM0/DQM1 (data masks). Operating voltage ~3.3V; speed grade -75 (approximately 75 MHz).
Manufacturer
- What kind of company: American multinational semiconductor company that designs and manufactures memory and storage technologies (DRAM, NAND flash, and related memory products).
Application
- Notebook/portable computers as main memory
- Embedded systems and consumer electronics (set-top boxes, digital cameras, GPS, printers)
- Graphics/video buffers and display controllers for budget systems
- Memory for FPGA/ASIC development boards
- Networking/industrial equipment needing small-footprint, high-bandwidth SDRAM
Notes: suited where ~8 MB of SDRAM at modest speed is required in a compact, RoHS-compliant package.