画像は参考用です

NAND512W3A2SN6E

Name: NAND512W3A2SN6E
Rating: 4.8 (15 reviews)

+BOM

IC FLASH 512MBIT PARALLEL 48TSOP

メーカーマイクロンテクノロジー株式会社
メーカー品番 #NAND512W3A2SN6E
在庫状況1914

365 日間品質保証

7*24 日間の品質保証

90-時間単位のサービス保証

1日間のアフターサービス保証

仕様

属性	値
Part Status	Obsolete
Base Product Number	NAND512
Digi Key Programmable	Verified
Memory Type	Non-Volatile
Memory Format	FLASH
Technology	FLASH - NAND
Memory Size	512Mbit
Memory Organization	64M x 8
Memory Interface	Parallel
Write Cycle Time - Word, Page	50ns
Voltage - Supply	2.7V ~ 3.6V
Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount
Package / Case	48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package	48-TSOP
Packaging	Tray
Access Time	50 ns

概要

Description

The NAND512W3A2SN6E is a NAND flash memory device, commonly used for data storage in various electronic applications. It features a 3.3V power supply and is part of the larger NAND flash technology family, known for its non-volatile memory capabilities, meaning it retains data without power. This particular device is manufactured with a 512 megabit capacity, organized in a specific architecture that allows for efficient data storage and retrieval.
The NAND512W3A2SN6E is designed to support high-density storage needs with compact form factors, making it suitable for use in consumer electronics, industrial devices, and other embedded systems. It offers fast read and write speeds, endurance for numerous write/erase cycles, and error correction mechanisms to ensure data integrity. The device's compatibility with various interfaces and protocols further enhances its versatility in different applications. Additionally, its small form factor and low power consumption make it an attractive choice for portable and battery-operated devices. Overall, the NAND512W3A2SN6E is a reliable, efficient solution for modern storage requirements.

Equivalent

The NAND512W3A2SN6E is a 512Mb NAND Flash memory chip produced by STMicroelectronics. Equivalent products typically include other NAND Flash memory chips with similar storage capacity and specifications from manufacturers like Samsung, Micron, Toshiba (now Kioxia), and SK Hynix. When looking for equivalents, check for similar memory size, voltage requirements, interface type, and package dimensions to ensure compatibility. Always confirm with the manufacturer’s datasheet or technical support for compatibility details.

Features

The NAND512W3A2SN6E is a NAND Flash memory device with the following key features:
1. Capacity: 512 Megabit (Mb) organized as 32 Megabyte (MB).
2. Architecture: Single-level cell (SLC) architecture for reliability and endurance.
3. Interface: Supports a standard NAND interface for easy integration.
4. Page Size: 528 bytes per page, with additional spare bytes for error correction and metadata.
5. Block Size: Composed of 32 pages per block.
6. Reliability: High endurance with a typical data retention of 10 years.
7. Performance: Fast programming and erase times.
8. Package: Available in TSOP (Thin Small Outline Package) for compact applications.
9. Operating Voltage: 2.7V to 3.6V for versatile supply options.
10. Temperature Range: Typically supports industrial temperature ranges.
These features make it suitable for applications requiring reliable and durable flash storage, such as embedded systems, industrial electronics, and consumer devices.

Pinout

The NAND512W3A2SN6E is a NAND Flash memory device from STMicroelectronics. It comes in a TSOP48 package, meaning it has 48 pins. This NAND Flash memory is used for data storage applications and is commonly found in embedded systems and various electronic devices.
Key functions and features of the NAND512W3A2SN6E include:
1. Memory Size: It typically provides 512 Mbit (megabits) of storage capacity.
2. Interface: It supports a multiplexed I/O interface for efficient data transfer.
3. Organization: The memory is organized in blocks and pages, allowing for block-level and page-level operations.
4. ECC (Error Correction Code): Built-in ECC support helps in error detection and correction, enhancing data reliability.
5. Wear Leveling: Implements wear leveling techniques to prolong the lifespan of the memory by distributing write and erase cycles evenly across the memory cells.
6. Operating Voltage: It usually operates at a voltage range suitable for low-power applications.
These features make the NAND512W3A2SN6E suitable for use in consumer electronics, industrial applications, and other devices requiring reliable non-volatile memory storage.

Manufacturer

The NAND512W3A2SN6E is manufactured by STMicroelectronics. STMicroelectronics is a global semiconductor company that designs, develops, manufactures, and markets a wide range of semiconductor products. It is known for providing innovative solutions across multiple electronics applications, including automotive, industrial, personal electronics, and communications equipment. STMicroelectronics operates as a multinational corporation with a strong focus on research and development, and it has a reputation for delivering high-quality, reliable components for various technological needs.

Application

The NAND512W3A2SN6E is a NAND Flash memory chip commonly used in a variety of applications. It is well-suited for data storage in consumer electronics, such as smartphones, tablets, and digital cameras, due to its high-density and cost-effective storage capabilities. In industrial applications, it serves in embedded systems for data logging and firmware storage. It is also used in solid-state drives (SSDs) for its reliability and efficient data management. Additionally, it finds use in automotive systems for infotainment and navigation data storage. Its versatility makes it a popular choice in any application requiring non-volatile, high-capacity storage solutions.

Package

The NAND512W3A2SN6E is a NAND Flash memory chip from STMicroelectronics, housed in a TSOP-48 package. TSOP stands for Thin Small Outline Package, which is commonly used for memory ICs due to its compact and efficient design, making it suitable for various electronic devices requiring reliable storage solutions.

Frequently Asked Questions

Q: Is this NAND512W3A2SN6E suitable for industrial temperature applications?
A: Yes, it supports an operating temperature range of -40°C to 85°C, making it suitable for industrial environments.

Q: What is the memory density and organization of this device?
A: It offers 512Mbit density organized as 64M x 8 bits, ideal for code or data storage in embedded systems.

Q: What is the access time and write cycle time for this NAND Flash?
A: Access time is 50 ns, and the page write cycle time is also 50 ns, enabling fast read and program operations.

Q: Does this component support a parallel memory interface?
A: Yes, it features a parallel memory interface for direct connection to microcontrollers or SoCs.

Q: What is the supply voltage range required for operation?
A: The voltage supply range is 2.7V to 3.6V, compatible with standard 3.3V logic systems.

Q: What package type is used for this NAND Flash memory?
A: It comes in a 48-TFSOP package (18.40mm width) with a surface mount supplier device package of 48-TSOP.

Q: Can this part be used for boot memory in embedded designs?
A: Yes, as a NAND Flash with parallel interface and non-volatile storage, it is well-suited for boot and data logging applications.