PC48F4400P0TB0EE

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PC48F4400P0TB0EE

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IC FLASH 512MBIT PAR 64EASYBGA

  • メーカーマイクロンテクノロジー株式会社

  • メーカー品番 #PC48F4400P0TB0EE

  • 在庫状況8484

365 日間品質保証

7*24 日間の品質保証

90-時間単位のサービス保証

1日間のアフターサービス保証

仕様

属性
Series Axcell™
PartStatus Obsolete
BaseProductNumber PC48F4400
DigiKeyProgrammable Not Verified
MemoryType Non-Volatile
MemoryFormat FLASH
Technology FLASH - NOR
MemorySize 512Mbit
MemoryOrganization 32M x 16
MemoryInterface Parallel
ClockFrequency 52 MHz
WriteCycleTime-Word,Page 95ns
Voltage-Supply 2.3V ~ 3.6V
OperatingTemperature -40°C ~ 85°C (TC)
MountingType Surface Mount
Package 64-LBGA
SupplierDevicePackage 64-EasyBGA (10x13)
Packaging Tray
AccessTime 95 ns

概要

Description

The PC48F4400P0TB0EE is a type of non-volatile memory developed by Intel, specifically a NAND flash memory device. It is part of the NAND Flash family used for data storage in various applications, including consumer electronics, mobile devices, and embedded systems.
Key features of the PC48F4400P0TB0EE include a density of 4 Gb (gigabits), which provides substantial storage capacity for applications requiring fast access and high reliability. It operates using a serial interface, making it compatible with many microcontrollers and processors.
This memory is designed to withstand a significant number of program/erase cycles, enhancing its longevity and making it suitable for applications that involve frequent data updates. Additionally, it typically includes features such as error correction and wear leveling, which help maintain data integrity over time.
Overall, the PC48F4400P0TB0EE is an efficient solution for applications needing reliable and high-speed data storage.

Equivalent

The PC48F4400P0TB0EE is a NAND Flash memory chip. Equivalent products include the Micron MT29F4G08ABAEAWP and the Samsung K9GAG08U0M. Additionally, products like the Intel 29F400B and the STMicroelectronics M29W400BT can be considered compatible alternatives, depending on specific application requirements such as capacity, speed, and interface. Always consult datasheets for precise specifications and compatibility.

Features

The PC48F4400P0TB0EE is a NAND Flash memory device produced by Micron Technology. Key features include:
1. Storage Capacity: 4 Gb (Gigabits), suitable for various applications requiring significant data storage.

2. Architecture: It utilizes a page-oriented architecture, enhancing read and write performance.
3. Interface: Connects via a parallel interface, supporting fast data access.
4. Erase Block Size: Supports large erase blocks, allowing efficient data management and minimizing write amplification.
5. Data Retention: Typically offers data retention of up to 10 years, ensuring reliability in data storage.
6. Endurance: Designed for high endurance, suitable for applications with frequent write and erase cycles.
7. Temperature Range: Operates within a specified temperature range, making it suitable for various environments.
8. Applications: Ideal for consumer electronics, automotive, and industrial applications, where reliable data storage is critical.
This device is well-suited for applications needing robust and efficient non-volatile memory solutions.

Pinout

The PC48F4400P0TB0EE is a NAND flash memory device from Micron Technology, featuring a pin count of 48. This device is designed for high-density storage applications, typically used in consumer electronics, computing, and embedded systems.
The primary functions of this NAND flash memory include:
1. Non-Volatile Storage: Retains data without power, making it suitable for permanent data storage.
2. High Density: Offers significant storage capacity, enabling efficient data storage in compact form factors.
3. Data Retention: Designed for reliable data retention over time, typically rated for several years.
4. Block Erase: Supports block-level data erasure, allowing for efficient writing and rewriting of data.
5. Random Access: Provides random access read capabilities for quick data retrieval.
Overall, the PC48F4400P0TB0EE is geared toward applications requiring robust, high-capacity storage solutions.

Manufacturer

The PC48F4400P0TB0EE is manufactured by Micron Technology, Inc. Micron is a leading global provider of semiconductor solutions, specializing in memory and storage technologies. The company is best known for its DRAM, NAND flash memory, and other advanced memory products used in a variety of applications, including personal computing, mobile devices, enterprise servers, and automotive systems. Founded in 1978 and headquartered in Boise, Idaho, Micron plays a significant role in the semiconductor industry and is recognized for its innovation and commitment to developing high-performance memory solutions. The company serves a broad range of markets, including consumer electronics, data centers, and industrial applications, making it a pivotal player in the technology sector.

Application

The PC48F4400P0TB0EE is a NAND Flash memory device primarily used in applications that require high-density data storage. Its key application areas include embedded systems, consumer electronics (such as smartphones and tablets), industrial automation, automotive electronics, and networking equipment. It is suitable for applications requiring reliable data retention and fast read/write speeds, such as firmware storage, operating systems, and multimedia content. Additionally, it supports various data-intensive applications in IoT devices and edge computing solutions.

Package

The PC48F4400P0TB0EE is packaged in a TSOP (Thin Small Outline Package), specifically designed for high-density flash memory applications. This package type allows for compact motherboard designs while maintaining efficient thermal dissipation and electrical performance.

Frequently Asked Questions


Q: What is the memory technology and density of this component?
A: It is a Non-Volatile FLASH - NOR memory with a density of 512Mbit (organized as 32M x 16).


Q: What is the standard access time and clock frequency?
A: The access time is 95 ns, and the synchronous clock frequency is 52 MHz for read operations.


Q: What voltage range does this memory support?
A: It operates with a single supply voltage between 2.3V and 3.6V.


Q: Is this component suitable for extended temperature applications?
A: Yes, its operating temperature ranges from -40°C to 85°C (TC), ideal for industrial environments.


Q: What interface type does the memory use?
A: It utilizes a Parallel memory interface for high-speed data transfer.


Q: What package options are available for this part?
A: It is available in a 64-LBGA package, with the supplier device package being a 64-EasyBGA (10x13) surface mount.


Q: What is the write cycle time specification?
A: The write cycle time for a word or page is 95ns (typical).


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