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SCTW35N65G2V
+BOMSICFET N-CH 650V 45A HIP247
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メーカーRFE/フューゼテック
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メーカー品番 #SCTW35N65G2V
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データシート SCTW35N65G2V DataSheet
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在庫状況19557
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Supplier | STMicroelectronics |
| Package | Tube |
| Series | Automotive, AEC-Q101 |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| DraintoSourceVoltage(Vdss) | 650 V |
| Current-ContinuousDrain(Id)@25°C | 45A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 18V, 20V |
| RdsOn(Max)@IdVgs | 67mOhm @ 20A, 20V |
| Vgs(th)(Max)@Id | 5V @ 1mA |
| GateCharge(Qg)(Max)@Vgs | 73 nC @ 20 V |
| Vgs(Max) | +22V, -10V |
| InputCapacitance(Ciss)(Max)@Vds | 1370 pF @ 400 V |
| PowerDissipation(Max) | 240W (Tc) |
| OperatingTemperature | -55°C ~ 200°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | HiP247™ |
概要
Description
The SCTW35N65G2V is a silicon carbide (SiC) power MOSFET designed by STMicroelectronics. It is known for its high efficiency and performance in demanding applications. This MOSFET features a maximum drain-source voltage of 650V and a continuous drain current of 28A, making it suitable for high-power applications.
The SCTW35N65G2V is characterized by its low on-resistance (R_DS(on)), which minimizes conduction losses and enhances overall system efficiency. Its fast switching capabilities reduce switching losses, contributing further to efficiency improvements, especially in applications like power conversion, inverters, and motor drives.
SiC technology provides advantages such as higher thermal conductivity, allowing for better heat dissipation and operation at high temperatures. This makes the SCTW35N65G2V ideal for applications in renewable energy, automotive, and industrial sectors where efficiency and thermal management are critical.
Overall, the SCTW35N65G2V is part of the growing trend toward SiC-based components that offer improved performance over traditional silicon-based counterparts, driving advances in power electronics.
The SCTW35N65G2V is characterized by its low on-resistance (R_DS(on)), which minimizes conduction losses and enhances overall system efficiency. Its fast switching capabilities reduce switching losses, contributing further to efficiency improvements, especially in applications like power conversion, inverters, and motor drives.
SiC technology provides advantages such as higher thermal conductivity, allowing for better heat dissipation and operation at high temperatures. This makes the SCTW35N65G2V ideal for applications in renewable energy, automotive, and industrial sectors where efficiency and thermal management are critical.
Overall, the SCTW35N65G2V is part of the growing trend toward SiC-based components that offer improved performance over traditional silicon-based counterparts, driving advances in power electronics.
Equivalent
The SCTW35N65G2V is a silicon carbide (SiC) MOSFET. Equivalent products from other manufacturers include:
1. Cree/Wolfspeed: C3M0065100K.
2. Infineon: IMW65R072M1H.
3. ON Semiconductor: NVHL040N65S3.
4. ROHM: SCT3060AR.
These equivalents may vary in specifications like RDS(on), gate charge, and packaging, so it’s important to compare these parameters when selecting a replacement.
1. Cree/Wolfspeed: C3M0065100K.
2. Infineon: IMW65R072M1H.
3. ON Semiconductor: NVHL040N65S3.
4. ROHM: SCT3060AR.
These equivalents may vary in specifications like RDS(on), gate charge, and packaging, so it’s important to compare these parameters when selecting a replacement.
Features
The SCTW35N65G2V is a power MOSFET from STMicroelectronics, designed for high-efficiency energy conversion applications. Key features include:
1. VDS Voltage: It has a drain-to-source voltage (VDS) rating of 650V, making it suitable for high-voltage applications.
2. RDS(on): The MOSFET offers low on-resistance (RDS(on)), which minimizes conduction losses and improves efficiency.
3. Current Rating: It can handle high current up to 35A, which is ideal for power-intensive operations.
4. Technology: Utilizes ST's MDmesh II Power MOSFET technology for enhanced performance.
5. Temperature Range: Capable of operating over a wide temperature range, suitable for various environments.
6. Package: Typically available in a TO-247 package, providing thermal efficiency and ease of mounting.
7. Application Areas: Commonly used in power supply units, converters, and various industrial applications requiring efficient power management.
These attributes make the SCTW35N65G2V a robust choice for engineers seeking reliable performance in demanding electrical environments.
1. VDS Voltage: It has a drain-to-source voltage (VDS) rating of 650V, making it suitable for high-voltage applications.
2. RDS(on): The MOSFET offers low on-resistance (RDS(on)), which minimizes conduction losses and improves efficiency.
3. Current Rating: It can handle high current up to 35A, which is ideal for power-intensive operations.
4. Technology: Utilizes ST's MDmesh II Power MOSFET technology for enhanced performance.
5. Temperature Range: Capable of operating over a wide temperature range, suitable for various environments.
6. Package: Typically available in a TO-247 package, providing thermal efficiency and ease of mounting.
7. Application Areas: Commonly used in power supply units, converters, and various industrial applications requiring efficient power management.
These attributes make the SCTW35N65G2V a robust choice for engineers seeking reliable performance in demanding electrical environments.
Pinout
The SCTW35N65G2V is a silicon carbide (SiC) power MOSFET designed for high-efficiency applications. It comes in a TO-247 package and typically has three pins. The pin configuration and functions are as follows:
1. Gate (G): This pin is used to control the on/off state of the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is the terminal through which the current flows into the device when it is in the 'on' state. It is connected to the load in a circuit.
3. Source (S): This pin is the terminal through which current exits the device. It is typically connected to the ground or the negative side of the power supply.
The SCTW35N65G2V is designed to handle high voltages and currents with improved efficiency compared to traditional silicon-based MOSFETs. It is commonly used in applications such as power converters, inverters, and motor drives.
1. Gate (G): This pin is used to control the on/off state of the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is the terminal through which the current flows into the device when it is in the 'on' state. It is connected to the load in a circuit.
3. Source (S): This pin is the terminal through which current exits the device. It is typically connected to the ground or the negative side of the power supply.
The SCTW35N65G2V is designed to handle high voltages and currents with improved efficiency compared to traditional silicon-based MOSFETs. It is commonly used in applications such as power converters, inverters, and motor drives.
Manufacturer
The SCTW35N65G2V is manufactured by STMicroelectronics. STMicroelectronics is a global semiconductor company that designs, manufactures, and markets a wide range of semiconductor products. The company serves sectors like automotive, industrial, personal electronics, and communications equipment. It is known for its innovation and advanced technology in areas such as microcontrollers, power management, sensors, and digital integrated circuits. STMicroelectronics is headquartered in Geneva, Switzerland, and operates worldwide with a diverse portfolio aimed at enabling smarter driving and factories, advancing consumer technology, and supporting the development of the Internet of Things (IoT).
Application
The SCTW35N65G2V is a silicon carbide (SiC) power MOSFET used in various high-efficiency and high-performance applications. Its application areas include:
1. Power Supplies: Used in switch-mode power supplies (SMPS) for improved efficiency and reduced heat dissipation.
2. Renewable Energy: Employed in solar inverters and wind turbines for efficient energy conversion.
3. Electric Vehicles: Utilized in onboard chargers and powertrain inverters for enhanced performance.
4. Industrial Motor Drives: Enhances efficiency and reliability in motor control systems.
5. Telecommunications: Supports power infrastructure by improving efficiency in DC-DC and AC-DC converters.
These applications benefit from the MOSFET's high-speed switching, low losses, and high thermal conductivity.
1. Power Supplies: Used in switch-mode power supplies (SMPS) for improved efficiency and reduced heat dissipation.
2. Renewable Energy: Employed in solar inverters and wind turbines for efficient energy conversion.
3. Electric Vehicles: Utilized in onboard chargers and powertrain inverters for enhanced performance.
4. Industrial Motor Drives: Enhances efficiency and reliability in motor control systems.
5. Telecommunications: Supports power infrastructure by improving efficiency in DC-DC and AC-DC converters.
These applications benefit from the MOSFET's high-speed switching, low losses, and high thermal conductivity.
Package
The SCTW35N65G2V is a silicon carbide (SiC) power MOSFET, and it comes in a TO-247 long-lead package. This package type is commonly used for high-power semiconductor devices, providing efficient thermal management and ease of mounting on circuit boards.
