SI4288DY-T1-GE3

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SI4288DY-T1-GE3

+BOM

MOSFET 2N-CH 40V 9.2A 8SO

365 日間品質保証

7*24 日間の品質保証

90-時間単位のサービス保証

1日間のアフターサービス保証

仕様

属性
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
Part Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain(Id) @ 25°C 9.2A
Rds On(Max) @ Id Vgs 20mOhm @ 10A, 10V
Vgs(th)(Max) @ Id 2.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 15nC @ 10V
Input Capacitance(Ciss)(Max) @ Vds 580pF @ 20V
Power - Max 3.1W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount

概要

Description

The SI4288DY-T1-GE3 is a type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). It is commonly used in electronic applications for switching and amplification due to its efficient conductivity and fast switching speeds. The device is manufactured by Vishay Siliconix, a company known for producing reliable semiconductor products.
Key characteristics of the SI4288DY-T1-GE3 include a low on-resistance, which minimizes power loss and heat generation during operation, making it suitable for high-efficiency power management applications. It typically operates at a voltage range suitable for various circuits and is packaged in a compact form, often the SO-8 package, facilitating integration into printed circuit boards (PCBs).
The MOSFET is favored for applications where space is at a premium, and efficient power handling is critical, such as in DC-DC converters, load switches, and motor control systems. Its design allows for robust performance under demanding conditions, and it is often selected for both commercial and industrial applications.

Equivalent

The SI4288DY-T1-GE3 is a MOSFET from Vishay. Equivalent products might include similar N-channel MOSFETs from other manufacturers with comparable voltage, current ratings, and package types. These could include the IRFZ44N from Infineon, NTD2955 from ON Semiconductor, or the FQP30N06L from Fairchild. Always check the datasheets to ensure specifications match your requirements, such as threshold voltage, Rds(on), and switching characteristics.

Features

The SI4288DY-T1-GE3 is a N-channel MOSFET designed for various applications requiring efficient power management. Key features of this component include:
1. Low On-Resistance: It offers a low on-resistance, which helps reduce power loss and improve overall efficiency in circuits.
2. High Current Capacity: This MOSFET can handle substantial current loads, making it suitable for high-power applications.
3. Fast Switching Speed: The component supports rapid switching, essential for high-frequency applications and minimizing energy loss during transition periods.
4. Thermal Performance: It is designed to dissipate heat effectively, which enhances reliability and durability under high-power operations.
5. Compact Package: The SI4288DY-T1-GE3 comes in a compact package, making it suitable for space-constrained designs.
6. ESD Protection: Featuring built-in electrostatic discharge (ESD) protection, it helps safeguard the component and the circuit from static discharge damage.
7. Robust Design: It is built to withstand various environmental and electrical stresses, ensuring long-term performance in demanding conditions.
These features make the SI4288DY-T1-GE3 a versatile and reliable choice for designers looking for effective power management solutions in their electronic designs.

Pinout

The SI4288DY-T1-GE3 is a MOSFET transistor manufactured by Vishay Siliconix. It is part of the PowerPAK SO-8 package family. This device has an 8-pin configuration, commonly used for surface-mount applications. The pin count and functions are as follows:
1. Pin 1 (G - Gate): Used to control the operation of the MOSFET, allowing or preventing current flow from the drain to the source.
2. Pin 2 (D - Drain): Connected to the load and one terminal of the power supply.
3. Pin 3 (D - Drain): Another connection point for the drain, often internally connected to Pin 2 to handle higher currents.
4. Pin 4 (D - Drain): Additional drain connection to manage power dissipation.
5. Pin 5 (S - Source): Commonly connected to ground in N-channel MOSFETs.
6. Pin 6 (S - Source): Another terminal for the source, often internally linked to Pin 5.
7. Pin 7 (S - Source): Additional source connection, similar to Pin 6.
8. Pin 8 (S - Source): Another source terminal, completing the circuit.
This MOSFET is primarily used for switching applications and load management in power electronics.

Manufacturer

The SI4288DY-T1-GE3 is manufactured by Vishay Intertechnology. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. Founded in 1962 by Dr. Felix Zandman, the company has grown to become one of the largest producers in the electronics industry. Vishay's product portfolio includes a wide range of components such as resistors, capacitors, inductors, diodes, and transistors, among others.
Vishay's components are widely used in various applications across different industries, including automotive, industrial, consumer electronics, telecommunications, military, aerospace, and medical. The company is known for its innovation in technology and commitment to providing high-quality, reliable products. Vishay operates manufacturing plants in several countries around the world, ensuring a robust supply chain and global presence.

Application

The SI4288DY-T1-GE3 is a N-channel MOSFET commonly used in applications requiring efficient power management and switching. Its key application areas include DC-DC converters, power supply circuits, load switching, and motor control in consumer electronics and industrial equipment. It's also utilized in battery management systems and automotive applications due to its low on-resistance and fast switching capabilities, enhancing energy efficiency and performance in these systems.

Package

The SI4288DY-T1-GE3 is a N-Channel MOSFET housed in a standard PowerPAK SO-8 package. This package type is designed for efficient thermal performance and compact size, making it suitable for high-density applications.

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