仕様
| 属性 | 値 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | Automotive, AEC-Q101 |
| Part Status | Active |
| Transistor Type | PNP |
| Current - Collector(Ic)(Max) | 500 mA |
| Voltage - Collector Emitter Breakdown(Max) | 80 V |
| Vce Saturation(Max) @ Ib Ic | 250mV @ 10mA, 100mA |
| Current - Collector Cutoff(Max) | 100nA |
| DC Current Gain(h FE)(Min) @ Ic Vce | 100 @ 100mA, 1V |
| Power - Max | 225 mW |
| Frequency - Transition | 50MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
概要
Description
The SMMBTA56LT1G is a PNP bipolar junction transistor (BJT) in a SOT-23 package, designed for general-purpose amplification and switching applications. Key features include:
- Voltage Rating: -80V (VCEO)
- Current Rating: -500mA (IC)
- Low Saturation Voltage: Enhances efficiency in switching.
- High Current Gain (hFE): Typically 100–250, ensuring good signal amplification.
Common uses include load switching, signal amplification, and driver stages in portable electronics, power management, and automotive circuits. Its small form factor makes it ideal for space-constrained designs.
For detailed specs, refer to the datasheet from manufacturers like ON Semiconductor.
- Voltage Rating: -80V (VCEO)
- Current Rating: -500mA (IC)
- Low Saturation Voltage: Enhances efficiency in switching.
- High Current Gain (hFE): Typically 100–250, ensuring good signal amplification.
Common uses include load switching, signal amplification, and driver stages in portable electronics, power management, and automotive circuits. Its small form factor makes it ideal for space-constrained designs.
For detailed specs, refer to the datasheet from manufacturers like ON Semiconductor.
Equivalent
Equivalent products to the SMMBTA56LT1G (PNP transistor) include:
- MMBTA56LT1G (Same specs, different package)
- 2N2907A (General-purpose PNP)
- BC856B (SMD PNP, similar characteristics)
- KSA992 (Low-noise PNP)
Check datasheets for exact compatibility in voltage, current, and gain (hFE).
- MMBTA56LT1G (Same specs, different package)
- 2N2907A (General-purpose PNP)
- BC856B (SMD PNP, similar characteristics)
- KSA992 (Low-noise PNP)
Check datasheets for exact compatibility in voltage, current, and gain (hFE).
Features
The SMMBTA56LT1G is a PNP bipolar junction transistor (BJT) in a small SOT-23 package. Key features:
- Type: PNP transistor
- Voltage Ratings:
- Collector-Emitter Voltage (V_CEO): -80V
- Collector-Base Voltage (V_CBO): -80V
- Emitter-Base Voltage (V_EBO): -5V
- Current Ratings:
- Continuous Collector Current (I_C): -500mA
- Peak Current (I_CM): -1A
- Power Dissipation (P_D): 225mW
- Gain (h_FE): 40–250 (at 150mA)
- Low Saturation Voltage: V_CE(sat) ~ -0.25V (at 50mA)
- Package: SOT-23 (3-pin)
- Applications: Switching, amplification, and load driving in compact circuits.
Compact and efficient, it’s ideal for space-constrained designs.
- Type: PNP transistor
- Voltage Ratings:
- Collector-Emitter Voltage (V_CEO): -80V
- Collector-Base Voltage (V_CBO): -80V
- Emitter-Base Voltage (V_EBO): -5V
- Current Ratings:
- Continuous Collector Current (I_C): -500mA
- Peak Current (I_CM): -1A
- Power Dissipation (P_D): 225mW
- Gain (h_FE): 40–250 (at 150mA)
- Low Saturation Voltage: V_CE(sat) ~ -0.25V (at 50mA)
- Package: SOT-23 (3-pin)
- Applications: Switching, amplification, and load driving in compact circuits.
Compact and efficient, it’s ideal for space-constrained designs.
Pinout
The SMMBTA56LT1G is a PNP bipolar junction transistor (BJT) in a SOT-23-3 package, meaning it has 3 pins.
Pin Functions (when viewing the flat side with pins down):
1. Emitter (E): Left pin – connected to the ground or lower voltage in circuits.
2. Base (B): Middle pin – controls the transistor's switching/amplification.
3. Collector (C): Right pin – connects to the load or higher voltage.
Key Features:
- PNP polarity (current flows from Emitter to Collector when Base is pulled low).
- Low power, general-purpose switching/amplification.
- Max ratings: 80V (VCEO), 500mA (IC).
Used in signal amplification, switching circuits, and driver applications.
Pin Functions (when viewing the flat side with pins down):
1. Emitter (E): Left pin – connected to the ground or lower voltage in circuits.
2. Base (B): Middle pin – controls the transistor's switching/amplification.
3. Collector (C): Right pin – connects to the load or higher voltage.
Key Features:
- PNP polarity (current flows from Emitter to Collector when Base is pulled low).
- Low power, general-purpose switching/amplification.
- Max ratings: 80V (VCEO), 500mA (IC).
Used in signal amplification, switching circuits, and driver applications.
Application
The SMMBTA56LT1G is a PNP bipolar transistor commonly used in:
1. Switching Circuits – For load control in low-power applications.
2. Amplification – Small-signal amplification in audio and RF stages.
3. Signal Inversion – Logic level shifting in digital circuits.
4. Consumer Electronics – Found in devices like remote controls, LED drivers, and portable gadgets.
5. Automotive Systems – Used in sensors and low-power control modules.
Its compact SOT-23 package makes it suitable for space-constrained designs.
1. Switching Circuits – For load control in low-power applications.
2. Amplification – Small-signal amplification in audio and RF stages.
3. Signal Inversion – Logic level shifting in digital circuits.
4. Consumer Electronics – Found in devices like remote controls, LED drivers, and portable gadgets.
5. Automotive Systems – Used in sensors and low-power control modules.
Its compact SOT-23 package makes it suitable for space-constrained designs.
