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STB120N4F6
+BOMMOSFET N-CH 40V 80A D2PAK
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メーカーRFE/フューゼテック
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メーカー品番 #STB120N4F6
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データシート STB120N4F6 DataSheet
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在庫状況3108
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Supplier | STMicroelectronics |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101, DeepGATE™, STripFET™ VI |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 40 V |
| Current-ContinuousDrain(Id)@25°C | 80A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 4mOhm @ 40A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 65 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 3850 pF @ 25 V |
| PowerDissipation(Max) | 110W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | D²PAK (TO-263) |
概要
Description
The STB120N4F6 is a N-channel Power MOSFET from STMicroelectronics, designed for high-efficiency switching applications. It features a very low on-state resistance (R_DS(on)), which minimizes power loss and enhances efficiency. The MOSFET operates with a maximum drain-source voltage (V_DS) of 40V and can handle a continuous drain current (I_D) up to 120A.
The device is built using ST's STripFET F6 technology, which offers an optimal balance between performance and cost. This technology also improves the device's switching speed and reduces gate charge, making it suitable for high-frequency applications. The STB120N4F6 is typically used in DC-DC converters, motor controllers, and other power management systems.
Encapsulated in a D2PAK package, the STB120N4F6 provides good thermal performance and is suitable for surface mounting. Additional features include low gate charge, high avalanche ruggedness, and excellent robustness in extreme temperature environments. Overall, the STB120N4F6 is a versatile and efficient MOSFET ideal for power electronics applications.
The device is built using ST's STripFET F6 technology, which offers an optimal balance between performance and cost. This technology also improves the device's switching speed and reduces gate charge, making it suitable for high-frequency applications. The STB120N4F6 is typically used in DC-DC converters, motor controllers, and other power management systems.
Encapsulated in a D2PAK package, the STB120N4F6 provides good thermal performance and is suitable for surface mounting. Additional features include low gate charge, high avalanche ruggedness, and excellent robustness in extreme temperature environments. Overall, the STB120N4F6 is a versatile and efficient MOSFET ideal for power electronics applications.
Equivalent
The STB120N4F6 is a power MOSFET. Equivalent products include:
1. IRFP4468 by Infineon Technologies: Offers similar voltage and current ratings.
2. IPP240N04S4-04 by Infineon: Comparable in terms of specifications.
3. NTB100N04R2 by ON Semiconductor: Another alternative with similar features.
4. FDBL86561-F085 by ON Semiconductor: Suitable for similar applications.
Always verify specifications with datasheets to ensure compatibility for your specific application.
1. IRFP4468 by Infineon Technologies: Offers similar voltage and current ratings.
2. IPP240N04S4-04 by Infineon: Comparable in terms of specifications.
3. NTB100N04R2 by ON Semiconductor: Another alternative with similar features.
4. FDBL86561-F085 by ON Semiconductor: Suitable for similar applications.
Always verify specifications with datasheets to ensure compatibility for your specific application.
Features
The STB120N4F6 is an N-channel Power MOSFET designed for efficient power management and switching applications. Key features include:
1. Voltage and Current Ratings: It operates with a drain-source voltage (V_DS) of 40V and can handle a continuous drain current (I_D) of up to 120A, making it suitable for high-power applications.
2. Low On-Resistance: The device features a low on-state resistance (R_DS(on)) of 4.0 mΩ, which minimizes power losses and improves efficiency, especially important in high-current applications.
3. Fast Switching: It provides fast switching capabilities, enhancing performance in applications requiring rapid on-off cycles.
4. Avalanche Ruggedness: The MOSFET is designed to withstand high-energy pulses in avalanche mode, contributing to its durability and reliability.
5. Package: It is available in a TO-220 package, which aids in effective thermal management and ease of mounting.
6. Thermal Performance: The STB120N4F6 offers good thermal performance, allowing it to operate efficiently under various thermal conditions.
These features make it suitable for use in automotive, industrial, and consumer electronics applications where efficient power handling and durability are essential.
1. Voltage and Current Ratings: It operates with a drain-source voltage (V_DS) of 40V and can handle a continuous drain current (I_D) of up to 120A, making it suitable for high-power applications.
2. Low On-Resistance: The device features a low on-state resistance (R_DS(on)) of 4.0 mΩ, which minimizes power losses and improves efficiency, especially important in high-current applications.
3. Fast Switching: It provides fast switching capabilities, enhancing performance in applications requiring rapid on-off cycles.
4. Avalanche Ruggedness: The MOSFET is designed to withstand high-energy pulses in avalanche mode, contributing to its durability and reliability.
5. Package: It is available in a TO-220 package, which aids in effective thermal management and ease of mounting.
6. Thermal Performance: The STB120N4F6 offers good thermal performance, allowing it to operate efficiently under various thermal conditions.
These features make it suitable for use in automotive, industrial, and consumer electronics applications where efficient power handling and durability are essential.
Pinout
The STB120N4F6 is an N-channel MOSFET produced by STMicroelectronics, primarily used for switching and amplifying electronic signals in power management applications. It is part of the Power MOSFET series designed for high efficiency and reliability.
Pin Count and Pin Configuration:
- The STB120N4F6 typically comes in a standard D2PAK package, which is a surface-mount package type.
- It has three pins:
1. Gate (G): This pin controls the MOSFET’s switching operations.
2. Drain (D): This is the pin through which the output current flows when the MOSFET is on.
3. Source (S): This pin is connected to the ground or the lower potential in a circuit.
Function:
The STB120N4F6 functions as a switch or amplifier in various applications like power supply units, motor drives, and DC-DC converters. It is designed to handle high currents efficiently with low resistance, contributing to reduced power loss and improved performance in electronic circuits.
Pin Count and Pin Configuration:
- The STB120N4F6 typically comes in a standard D2PAK package, which is a surface-mount package type.
- It has three pins:
1. Gate (G): This pin controls the MOSFET’s switching operations.
2. Drain (D): This is the pin through which the output current flows when the MOSFET is on.
3. Source (S): This pin is connected to the ground or the lower potential in a circuit.
Function:
The STB120N4F6 functions as a switch or amplifier in various applications like power supply units, motor drives, and DC-DC converters. It is designed to handle high currents efficiently with low resistance, contributing to reduced power loss and improved performance in electronic circuits.
Manufacturer
The STB120N4F6 is manufactured by STMicroelectronics. STMicroelectronics is a multinational electronics and semiconductor manufacturer headquartered in Geneva, Switzerland. The company is one of the world's leading producers of semiconductors and integrated devices. It designs, develops, manufactures, and markets a wide range of products, including microcontrollers, sensors, analog devices, and power management components, among others. STMicroelectronics serves various industries, including automotive, industrial, personal electronics, and communication equipment, making it a key player in the global electronics supply chain.
Application
The STB120N4F6 is a power MOSFET designed for high-efficiency applications. Its primary application areas include:
1. Power Supplies: Used in converters and power management for efficiency.
2. Motor Control: Suitable for driving motors in industrial and automotive applications.
3. Telecommunications: Employed in base stations and networking equipment for power regulation.
4. Automotive Systems: Utilized in electronic control units (ECUs) and electric vehicles.
5. Industrial Automation: Deployed in inverters and robotics for efficient energy usage.
6. Consumer Electronics: Integrated into devices requiring efficient power handling.
Its low on-resistance and high-speed switching make it ideal for applications demanding energy efficiency and high performance.
1. Power Supplies: Used in converters and power management for efficiency.
2. Motor Control: Suitable for driving motors in industrial and automotive applications.
3. Telecommunications: Employed in base stations and networking equipment for power regulation.
4. Automotive Systems: Utilized in electronic control units (ECUs) and electric vehicles.
5. Industrial Automation: Deployed in inverters and robotics for efficient energy usage.
6. Consumer Electronics: Integrated into devices requiring efficient power handling.
Its low on-resistance and high-speed switching make it ideal for applications demanding energy efficiency and high performance.
Package
The STB120N4F6 is a power MOSFET from STMicroelectronics, and it comes in a D2PAK package type. This surface-mount package is designed for high-power applications and provides efficient thermal performance.
