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STB120NF10T4
+BOMMOSFET N-CH 100V 110A D2PAK
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メーカーRFE/フューゼテック
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メーカー品番 #STB120NF10T4
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データシート STB120NF10T4 DataSheet
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パッケージ TO-263-3
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在庫状況6313
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | STripFET™ II |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 110A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 10.5mOhm @ 60A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 233 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 5200 pF @ 25 V |
| PowerDissipation(Max) | 312W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | D2PAK |
概要
Description
The STB120NF10T4 is a type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power management applications. Manufactured by STMicroelectronics, it is commonly used in power circuits due to its ability to handle high current and voltage levels efficiently. Key features of the STB120NF10T4 include a maximum drain current of 120A, a drain-source voltage of 100V, and a low on-resistance, which minimizes power loss and heat generation during operation. Its TO-220 package offers good thermal performance, making it suitable for applications requiring reliable thermal management. The device also provides fast switching speeds and robust performance, making it ideal for use in switching mode power supplies, motor control circuits, and DC-DC converters. Additionally, its high avalanche ruggedness further enhances its reliability in various demanding applications. The STB120NF10T4 is a versatile component that combines efficiency, reliability, and performance in power electronics.
Equivalent
The STB120NF10T4 is a N-channel MOSFET. Equivalent products from other manufacturers could include:
1. IRF1010N - from International Rectifier (now part of Infineon Technologies)
2. FDP8440 - from ON Semiconductor
3. FDB7030BL - from Fairchild Semiconductor (now part of ON Semiconductor)
4. AOT240 - from Alpha & Omega Semiconductor
Always verify electrical and thermal characteristics to ensure compatibility.
1. IRF1010N - from International Rectifier (now part of Infineon Technologies)
2. FDP8440 - from ON Semiconductor
3. FDB7030BL - from Fairchild Semiconductor (now part of ON Semiconductor)
4. AOT240 - from Alpha & Omega Semiconductor
Always verify electrical and thermal characteristics to ensure compatibility.
Features
The STB120NF10T4 is a N-channel Power MOSFET from STMicroelectronics, designed for high-efficiency power switching applications. Key features include:
1. Voltage Rating: It has a drain-source voltage (V_DS) rating of 100V, making it suitable for medium-voltage applications.
2. Current Rating: The continuous drain current (I_D) is 120A, enabling it to handle high current loads.
3. R_DS(on): It offers low on-resistance, typically around 0.005Ω, minimizing power losses and improving efficiency.
4. Package Type: Comes in a D²PAK package, which provides good thermal performance and is suitable for surface mount technology (SMT).
5. Technology: Utilizes ST's STripFET technology for enhanced switching performance and reduced conduction losses.
6. Applications: Commonly used in power supplies, motor control, and other applications requiring efficient power switching.
These features make the STB120NF10T4 a versatile MOSFET for various industrial and consumer electronic applications, particularly where efficiency and thermal performance are critical.
1. Voltage Rating: It has a drain-source voltage (V_DS) rating of 100V, making it suitable for medium-voltage applications.
2. Current Rating: The continuous drain current (I_D) is 120A, enabling it to handle high current loads.
3. R_DS(on): It offers low on-resistance, typically around 0.005Ω, minimizing power losses and improving efficiency.
4. Package Type: Comes in a D²PAK package, which provides good thermal performance and is suitable for surface mount technology (SMT).
5. Technology: Utilizes ST's STripFET technology for enhanced switching performance and reduced conduction losses.
6. Applications: Commonly used in power supplies, motor control, and other applications requiring efficient power switching.
These features make the STB120NF10T4 a versatile MOSFET for various industrial and consumer electronic applications, particularly where efficiency and thermal performance are critical.
Pinout
The STB120NF10T4 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by STMicroelectronics. It is typically housed in a D²PAK package, which typically has three pins. These pins are designated as Gate (G), Drain (D), and Source (S).
- Pin 1: Gate (G) - This pin is used to control the operation of the MOSFET. By applying a voltage to the gate, you can allow or prevent current from flowing between the drain and source.
- Pin 2: Drain (D) - This is the terminal through which the main current flows when the MOSFET is in the 'on' state.
- Pin 3: Source (S) - This is the terminal through which current exits the MOSFET.
The STB120NF10T4 is designed for high-efficiency power switching applications and is commonly used in power management, motor control, and other high-current switching applications.
- Pin 1: Gate (G) - This pin is used to control the operation of the MOSFET. By applying a voltage to the gate, you can allow or prevent current from flowing between the drain and source.
- Pin 2: Drain (D) - This is the terminal through which the main current flows when the MOSFET is in the 'on' state.
- Pin 3: Source (S) - This is the terminal through which current exits the MOSFET.
The STB120NF10T4 is designed for high-efficiency power switching applications and is commonly used in power management, motor control, and other high-current switching applications.
Manufacturer
The STB120NF10T4 is manufactured by STMicroelectronics. STMicroelectronics is a global semiconductor company that designs, develops, manufactures, and markets a wide range of semiconductor products. The company is known for its diverse portfolio, which includes products such as microcontrollers, sensors, power management devices, and integrated circuits. STMicroelectronics serves various industries, including automotive, industrial, personal electronics, and communications. The company is headquartered in Geneva, Switzerland, and is recognized for its focus on innovation and sustainability within the semiconductor industry.
Application
The STB120NF10T4 is a power MOSFET commonly used in applications requiring efficient power management and switching. Its primary application areas include:
1. Switching Power Supplies: Used for efficient power conversion in AC/DC and DC/DC converters.
2. Motor Control: Ideal for driving motors in industrial and automotive applications.
3. Lighting: Used in LED drivers for energy-efficient lighting solutions.
4. Battery Management: Plays a role in battery protection and charging systems.
5. Inverters: Suitable for use in solar inverters and other renewable energy systems.
6. Automotive: Employed in electronic control units (ECUs) for various automotive functions.
These applications leverage its low on-resistance and high-speed switching capabilities.
1. Switching Power Supplies: Used for efficient power conversion in AC/DC and DC/DC converters.
2. Motor Control: Ideal for driving motors in industrial and automotive applications.
3. Lighting: Used in LED drivers for energy-efficient lighting solutions.
4. Battery Management: Plays a role in battery protection and charging systems.
5. Inverters: Suitable for use in solar inverters and other renewable energy systems.
6. Automotive: Employed in electronic control units (ECUs) for various automotive functions.
These applications leverage its low on-resistance and high-speed switching capabilities.
Package
The STB120NF10T4 is a power MOSFET, and it typically comes in a D²PAK (TO-263) package. This package type is designed for surface mounting, offering efficient heat dissipation and compact size suitable for high power applications.
