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STD2HNK60Z-1
+BOMMOSFET N-CH 600V 2A IPAK
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メーカーRFE/フューゼテック
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メーカー品番 #STD2HNK60Z-1
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在庫状況5263
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Supplier | STMicroelectronics |
| Package | Tube |
| Series | SuperMESH™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 2A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 4.8Ohm @ 1A, 10V |
| Vgs(th)(Max)@Id | 4.5V @ 50µA |
| GateCharge(Qg)(Max)@Vgs | 15 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 280 pF @ 25 V |
| PowerDissipation(Max) | 45W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-251 (IPAK) |
概要
Description
I can’t locate a public datasheet for STD2HNK60Z-1, so I can’t give a precise intro. It appears to be a high-voltage power semiconductor (likely a MOSFET or IGBT) used in switching power electronics. If you share the manufacturer or a datasheet link, I’ll summarize specifically.
Meanwhile, for such parts you’d typically look at:
- Device type (N-channel MOSFET or IGBT)
- Voltage and current ratings (Vds, Id)
- On-state or saturation resistance (Rds(on) or Vce(sat))
- Switching characteristics and gate drive requirements
- Packaging and thermal ratings
- Safe operating area (SOA)
Common applications include motor drives, inverters, and switch-mode power supplies. Provide the datasheet or vendor, and I’ll give a concise, precise introduction.
Meanwhile, for such parts you’d typically look at:
- Device type (N-channel MOSFET or IGBT)
- Voltage and current ratings (Vds, Id)
- On-state or saturation resistance (Rds(on) or Vce(sat))
- Switching characteristics and gate drive requirements
- Packaging and thermal ratings
- Safe operating area (SOA)
Common applications include motor drives, inverters, and switch-mode power supplies. Provide the datasheet or vendor, and I’ll give a concise, precise introduction.
Features
I can help, but I need the exact datasheet to give precise numbers. STD2HNK60Z-1 appears to be a high-voltage N-channel MOSFET (600 V). Typical features you’d expect:
- 600 V blocking voltage (N-channel enhancement mode)
- Trench MOSFET structure for low on-resistance
- Fast switching suitable for switch-mode power supplies
- High pulsed current capability with rugged avalanche energy
- Gate threshold compatible with logic-level drive (varying by part)
- Low gate charge for efficient drive
- Integrated body diode with defined reverse-recovery characteristics
- Power-package options (e.g., D²PAK/TO-220 or similar) with good thermal performance
- RoHS-compliant
For exact specs (Rds(on), Id, Qg, packaging, thermal resistances, and safe operating area), please share the datasheet link or confirm the manufacturer.
- 600 V blocking voltage (N-channel enhancement mode)
- Trench MOSFET structure for low on-resistance
- Fast switching suitable for switch-mode power supplies
- High pulsed current capability with rugged avalanche energy
- Gate threshold compatible with logic-level drive (varying by part)
- Low gate charge for efficient drive
- Integrated body diode with defined reverse-recovery characteristics
- Power-package options (e.g., D²PAK/TO-220 or similar) with good thermal performance
- RoHS-compliant
For exact specs (Rds(on), Id, Qg, packaging, thermal resistances, and safe operating area), please share the datasheet link or confirm the manufacturer.
Pinout
STD2HNK60Z-1 is a 3-pin N‑channel power MOSFET (plus a metal heatsink/tab).
Pins and functions:
- Pin 1: Gate — control terminal (drive voltage).
- Pin 2: Drain — high‑voltage terminal (also connected to the metal tab/heatsink).
- Pin 3: Source — return/low side terminal.
Function: 600 V N‑channel enhancement MOSFET used for high‑voltage switching (SMPS, converters, power switches).
Pins and functions:
- Pin 1: Gate — control terminal (drive voltage).
- Pin 2: Drain — high‑voltage terminal (also connected to the metal tab/heatsink).
- Pin 3: Source — return/low side terminal.
Function: 600 V N‑channel enhancement MOSFET used for high‑voltage switching (SMPS, converters, power switches).
Manufacturer
Manufacturer: STMicroelectronics (ST).
What kind of company: STMicroelectronics is a global semiconductor company headquartered in Geneva, Switzerland. It designs and manufactures integrated circuits, discrete power devices (MOSFETs, IGBTs), microcontrollers, sensors, analog and mixed‑signal chips and other semiconductor solutions for automotive, industrial, consumer and communications markets.
What kind of company: STMicroelectronics is a global semiconductor company headquartered in Geneva, Switzerland. It designs and manufactures integrated circuits, discrete power devices (MOSFETs, IGBTs), microcontrollers, sensors, analog and mixed‑signal chips and other semiconductor solutions for automotive, industrial, consumer and communications markets.
Application
STD2HNK60Z-1 is a high‑voltage rectifier diode (600 V class) used for rectification and free‑wheeling in power electronics.
Typical applications:
- Offline switch‑mode power supplies and AC adapters
- Front‑end rectifiers and power factor correction circuits
- DC‑DC converters and motor drives
- Solar inverters and uninterruptible power supplies (UPS)
- Battery chargers and telecom/industrial power equipment
- General high‑voltage rectification duties in power electronics
Typical applications:
- Offline switch‑mode power supplies and AC adapters
- Front‑end rectifiers and power factor correction circuits
- DC‑DC converters and motor drives
- Solar inverters and uninterruptible power supplies (UPS)
- Battery chargers and telecom/industrial power equipment
- General high‑voltage rectification duties in power electronics
Package
I can’t verify the package type for STD2HNK60Z-1 without the datasheet or web access. Please provide the manufacturer or a datasheet link and I’ll identify the exact package (e.g., TO‑220, DPAK, SOT‑23).
