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STD35NF06LT4
+BOMMOSFET N-CH 60V 35A DPAK
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メーカーRFE/フューゼテック
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メーカー品番 #STD35NF06LT4
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データシート STD35NF06LT4 DataSheet
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パッケージ TO-252-3
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在庫状況1243
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | STripFET™ II |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 35A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 17mOhm @ 17.5A, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 33 nC @ 4.5 V |
| Vgs(Max) | ±16V |
| Input Capacitance(Ciss)(Max) @ Vds | 1700 pF @ 25 V |
| Power Dissipation (Max) | 80W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DPAK |
概要
Description
The STD35NF06LT4 is packaged in a TO-252 (DPAK) surface-mount package, making it suitable for applications requiring compact and efficient designs. It also includes built-in protection features like avalanche ruggedness, enhancing its reliability under high-stress conditions. The MOSFET's combination of high performance, efficiency, and reliability makes it a popular choice for various power electronic applications.
Equivalent
1. IRFZ44N from International Rectifier
2. NTD5867NL from ON Semiconductor
3. FDP6030BL from Fairchild (now part of ON Semiconductor)
4. FQP30N06L from Fairchild
Ensure to compare the specific parameters like voltage, current ratings, and RDS(on) to confirm suitability for your application.
Features
1. Drain-Source Voltage (V_DS): It can handle a maximum voltage of 60V.
2. Continuous Drain Current (I_D): Capable of handling up to 30A at 25°C.
3. R_DS(on): It has a low on-state resistance, typically around 0.022 ohms, which enhances efficiency by reducing power loss.
4. Gate-Source Voltage (V_GS): The maximum allowable gate-source voltage is ±20V.
5. Threshold Voltage (V_GS(th)): The typical gate threshold voltage is about 2V to 4V.
6. Total Gate Charge (Q_g): Approximately 45nC, indicating how much charge is needed to turn the MOSFET on.
7. Package Type: Available in a DPAK (TO-252) package, suitable for surface-mount applications.
8. Temperature Range: Operates effectively within a junction temperature range of -55°C to 175°C.
These features make the STD35NF06LT4 suitable for high-speed switching applications, such as in power management, DC-DC converters, and motor control circuits.
Pinout
1. Gate (G): This pin controls the MOSFET's operation. By applying a voltage to the gate, the device is turned on or off.
2. Drain (D): This is the output pin where the load is connected. The current flows from the drain to the source when the MOSFET is on.
3. Source (S): This pin is usually connected to ground in most configurations. It serves as the return path for the current flowing through the drain.
4. Tab (connected to Drain): The tab is electrically connected to the drain and is used for heat dissipation when the device is mounted on a heatsink or PCB.
The STD35NF06LT4 is generally used in switching applications due to its low on-state resistance and high-speed switching capabilities.
Manufacturer
Application
1. Switching Power Supplies: Used for efficient power management in converters and inverters.
2. Motor Control: Ideal for driving motors in automotive and industrial applications.
3. Load Switching: Suitable for controlling different loads in electronic devices.
4. Battery Management: Used in battery-powered devices for efficient energy utilization.
5. Lighting Systems: Utilized in LED drivers due to its fast switching capabilities.
6. Telecommunications: Employed in circuits requiring high-speed switching.
These applications leverage the MOSFET's low on-resistance and fast switching speed.