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STH270N8F7-2
+BOMMOSFET N-CH 80V 180A H2PAK
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メーカーRFE/フューゼテック
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メーカー品番 #STH270N8F7-2
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データシート STH270N8F7-2 DataSheet
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在庫状況1968
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | DeepGATE™, STripFET™ VII |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 80 V |
| Current-ContinuousDrain(Id)@25°C | 180A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 2.1mOhm @ 90A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 193 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 13600 pF @ 50 V |
| PowerDissipation(Max) | 315W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | H²PAK |
概要
Description
The "STH" prefix typically indicates the manufacturer's series, while "270N8F7" designates specific electrical and physical properties, such as current and voltage ratings. The "-2" suffix might refer to a specific package type or revision. The device's high temperature tolerance and robustness reduce cooling requirements and allow for smaller, lighter designs, contributing to overall system efficiency.
For engineers and designers, the STH270N8F7-2 offers a reliable solution for integrating cutting-edge power management into various technologies, allowing for innovation in energy conservation and power density design.
Equivalent
Pinout
The key functions of these pins are as follows:
- Gate (G): This is the control terminal used to turn the MOSFET on and off. Applying a voltage to the gate controls the flow of current between the drain and source.
- Drain (D): The drain is the terminal through which the load current flows when the MOSFET is in the "on" state.
- Source (S): The source is the terminal that provides the return path for the load current back to the power supply.
These MOSFETs are typically used in applications like DC-DC converters, motor drivers, and other power management systems due to their high current capacity and efficient switching characteristics.