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STP240N10F7
+BOMMOSFET N-CH 100V 180A TO220
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メーカーRFE/フューゼテック
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メーカー品番 #STP240N10F7
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データシート STP240N10F7 DataSheet
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パッケージ TO-220-3
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在庫状況2765
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Package | Tube |
| Series | DeepGATE™, STripFET™ VII |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 180A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 3.2mOhm @ 60A, 10V |
| Vgs(th)(Max)@Id | 4.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 176 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 12600 pF @ 25 V |
| PowerDissipation(Max) | 300W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220 |
概要
Description
Key specifications include:
- Drain-Source Voltage (V_DS): 100V
- Continuous Drain Current (I_D): Up to 240A
- R_DS(on): 0.003 Ω (maximum), indicating low on-state resistance for reduced power loss
- Gate-Source Voltage (V_GS): ± 20V
The STP240N10F7 is typically used in applications such as DC-DC converters, synchronous rectification, and various power supply designs. It offers fast switching, low conduction losses, and robust performance in both low- and high-load conditions. The device is packaged in TO-220, providing efficient heat dissipation and ease of use in circuit designs. This MOSFET is optimized for high-speed switching and offers a balance between performance and efficiency, making it ideal for modern electronic systems requiring reliable and compact power components.
Equivalent
Features
1. Voltage and Current Ratings: It supports a drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of up to 240A, making it suitable for high-power applications.
2. R_DS(on): The device has a low on-resistance, typically around 2.8 mΩ, which reduces power loss and increases efficiency.
3. Technology: It utilizes STMicroelectronics' STripFET F7 technology, which enhances performance by reducing gate charge and improving switching speed.
4. Package: The MOSFET is available in a TO-220 package, which is widely used for its excellent thermal performance and ease of mounting.
5. Applications: Ideal for use in power management, motor control, and switching applications due to its high efficiency and robust design.
6. Thermal Characteristics: Designed to handle significant power dissipation, aided by the TO-220 package's efficient heat dissipation characteristics.
These features make the STP240N10F7 a versatile and efficient choice for demanding electronic applications.
Pinout
1. Gate (G): This pin is used to control the MOSFET. Applying voltage to the gate allows current to flow between the drain and the source.
2. Drain (D): Current flows out through this pin when the MOSFET is on.
3. Source (S): Current flows into this pin. It is typically connected to the ground in many applications.
The STP240N10F7 is part of the super-junction MOSFET series, designed for high efficiency and high-speed switching, which are critical for power applications like converters and power supplies. The specifications of this MOSFET include high current capacity and low on-resistance, making it suitable for high-power and high-efficiency applications.
Manufacturer
Application
1. Power Supply Units: Used in AC-DC and DC-DC converters for efficient power management.
2. Motor Control: Ideal for controlling motors in industrial and consumer electronics due to its fast switching capabilities.
3. Automotive Systems: Suitable for electronic control units (ECUs), electric power steering, and other automotive applications.
4. Renewable Energy Systems: Utilized in solar inverters and battery management systems.
5. Lighting Systems: Applied in LED drivers for efficient lighting solutions.
These applications benefit from the MOSFET's low on-state resistance and high current handling capabilities.