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STW40N60M2
+BOMMOSFET N-CH 600V 34A TO247
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メーカーRFE/フューゼテック
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メーカー品番 #STW40N60M2
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データシート STW40N60M2 DataSheet
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パッケージ TO-247
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在庫状況4279
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Package | Tube |
| Series | MDmesh™ II Plus |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 34A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 88mOhm @ 17A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 57 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 2500 pF @ 100 V |
| PowerDissipation(Max) | 250W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247-3 |
概要
Description
Key features of the STW40N60M2 include a drain-source voltage (V_DS) of 600V, a continuous drain current (I_D) of 40A, and a very low on-resistance (R_DS(on)) which minimizes power losses. It also offers a fast recovery body diode and a high avalanche ruggedness, enhancing its reliability in demanding environments.
The device is housed in a TO-247 package, which provides effective thermal performance and is suitable for applications requiring efficient heat dissipation. The combination of advanced silicon technology and design makes the STW40N60M2 an excellent choice for applications requiring high efficiency and robustness.
Equivalent
1. IRFP460 - 500V, 20A MOSFET
2. FCP190N60E - 600V, 40A MOSFET
3. IXFH40N60Q - 600V, 40A MOSFET
4. AOT40N60 - 600V, 40A MOSFET
These alternatives have similar voltage and current ratings, though package and specific characteristics may vary. Always check the datasheets for compatibility with your application.
Features
1. N-Channel MOSFET: It operates as an N-channel, enhancing high-speed switching performance.
2. VDSS Rating: It has a drain-source voltage (VDSS) of 600V, making it suitable for high-voltage applications.
3. ID Rating: The maximum continuous drain current (ID) is 40A, catering to high-power applications.
4. RDS(on): It features a low on-state resistance (RDS(on)), improving efficiency by reducing power loss.
5. Gate Charge (Qg): The device offers a low total gate charge, enhancing switching speed.
6. Package Type: It typically comes in a TO-247 package, which aids in heat dissipation.
7. Applications: Suitable for power supplies, converters, and motor control applications.
8. Ruggedness: Built with robust construction to withstand high-energy pulses and stress.
These features make the STW40N60M2 ideal for various power management and conversion applications, ensuring reliability and efficiency.
Pinout
1. Gate (G): This pin controls the MOSFET's on/off state by applying a voltage to it.
2. Drain (D): This is the terminal where the load is connected, and it carries current when the MOSFET is in the 'on' state.
3. Source (S): This terminal is connected to ground or the negative side of the power supply, completing the circuit when the MOSFET is activated.
The STW40N60M2 is part of the MDmesh II series, known for its low on-resistance and high-frequency switching capabilities, making it suitable for applications like power supplies, motor drives, and lighting. It can handle a maximum drain-source voltage of 600V and a continuous drain current of up to 40A.
Manufacturer
Application
1. Switch Mode Power Supplies (SMPS): Efficient power conversion in computer, consumer electronics, and industrial power supplies.
2. Motor Drives: Used in motor control applications for industrial and automotive sectors.
3. Inverters: Suitable for DC-AC inverter applications, such as solar inverters.
4. Converters: Ideal in DC-DC converters for telecommunications and data centers.
5. Lighting: Used in ballast and LED lighting systems for high efficiency.
6. Uninterruptible Power Supplies (UPS): Provides reliable power switching in backup systems.
These applications benefit from the device’s robustness, efficiency, and reliability.