2N7002,215 vs 2N7002CK

2N7002,215と2N7002CKの詳細な比較では、それぞれの仕様と主要機能に関する貴重な洞察を提供します。RoHS指令への準拠、REACH規則、シリーズ、実装スタイル、パッケージタイプ、その他の関連特性など、重要な要素を詳細に網羅しています。違いを並べて表示することで、部品選定が容易になり、特定のアプリケーションに最適なオプションを選択しやすくなります。

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002CK is a viable functional replacement candidate for the 2N7002,215 in most low-power switching applications, with identical drain-source voltage, continuous drain current, and package footprint. Designers should validate gate threshold voltage tolerance and gate charge characteristics against the target circuit's drive and switching-speed requirements before committing to production.

Drain-Source Voltage Rating High match
Continuous Drain Current High match
Package Type High match
Gate Threshold Voltage Validation required

Parts at a glance

Part A

2N7002,215

ネクスペリアUSA株式会社

Lifecycle
Active
Stock
6582 個数
Package
SOT-23-3
Series
トランジスタ - FET、MOSFET - シングル
Part B

2N7002CK

ネクスペリアUSA株式会社

Lifecycle
Active
Stock
1570 個数
Package
SOT-23-3
Series
トランジスタ - FET、MOSFET - シングル

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification 2N7002,215 2N7002CK
Part Status Active Active
Series TrenchMOS™ -
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 60 V -
Current - Continuous Drain(Id) @ 25°C 300mA (Ta) -
Drive Voltage(Max Rds On Min Rds On) 10V -
Rds On(Max) @ Id Vgs 5Ohm @ 500mA, 10V -
Vgs(th)(Max) @ Id 2.5V @ 250µA -
Vgs(Max) ±30V -
Input Capacitance(Ciss)(Max) @ Vds 50 pF @ 10 V -
Power Dissipation (Max) 830mW (Ta) -
Operating Temperature -65°C ~ 150°C (TJ) -
Mounting Type Surface Mount -