2N7002K vs 2N7002LT1G

2N7002Kと2N7002LT1Gの詳細な比較では、それぞれの仕様と主要機能に関する貴重な洞察を提供します。RoHS指令への準拠、REACH規則、シリーズ、実装スタイル、パッケージタイプ、その他の関連特性など、重要な要素を詳細に網羅しています。違いを並べて表示することで、部品選定が容易になり、特定のアプリケーションに最適なオプションを選択しやすくなります。

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002K is a compatible functional replacement candidate for the 2N7002LT1G in most low-power switching applications, with matching voltage ratings, current handling, and package footprint. Designers should validate gate threshold spread and thermal margins in the target circuit before committing to production.

Drain-Source Voltage Rating High match

Continuous Drain Current High match

Package Type High match

Gate Threshold Voltage Validation required

Review the critical differences →

Parts at a glance

Part A

2N7002K

レクトロンUSA

Lifecycle: Active
Stock: 3271 個数
Package: SOT-23
Series: トランジスタ - FET、MOSFET - シングル

+BOM 見積依頼

Part B

2N7002LT1G

オンセミコンダクター社

Lifecycle: Active
Stock: 7047 個数
Package: SOT-23-3
Series: トランジスタ - FET、MOSFET - シングル

+BOM 見積依頼

Need help validating a replacement?

Send your BOM and application constraints for technical and sourcing review.

見積依頼 Contact technical support

Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	2N7002K	2N7002LT1G
Part Status	Active	Active
FET Type	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V	60 V
Current - Continuous Drain(Id) @ 25°C	300mA (Ta)	115mA (Tc)
Drive Voltage(Max Rds On Min Rds On)	5V, 10V	5V, 10V
Rds On(Max) @ Id Vgs	2Ohm @ 500mA, 10V	7.5Ohm @ 500mA, 10V
Vgs(th)(Max) @ Id	1.9V @ 250µA	2.5V @ 250µA
Vgs(Max)	±20V	±20V
Input Capacitance(Ciss)(Max) @ Vds	50 pF @ 25 V	50 pF @ 25 V
Power Dissipation (Max)	350mW (Ta)	225mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount

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