2N7002,215 vs 2N7002K

2N7002,215と2N7002Kの詳細な比較では、それぞれの仕様と主要機能に関する貴重な洞察を提供します。RoHS指令への準拠、REACH規則、シリーズ、実装スタイル、パッケージタイプ、その他の関連特性など、重要な要素を詳細に網羅しています。違いを並べて表示することで、部品選定が容易になり、特定のアプリケーションに最適なオプションを選択しやすくなります。

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002K and 2N7002,215 are both N-channel enhancement-mode MOSFETs in SOT-23 packages with matched voltage and current ratings, making the 2N7002K a viable functional replacement for the 2N7002,215 in most low-power switching applications. Designers should verify gate threshold voltage tolerance and thermal derating against their specific circuit requirements before committing to a drop-in substitution.

Drain-Source Voltage Rating High match
Continuous Drain Current High match
Package Type High match
Gate Threshold Voltage Validation required

Parts at a glance

Part A

2N7002,215

ネクスペリアUSA株式会社

Lifecycle
Active
Stock
6582 個数
Package
SOT-23-3
Series
トランジスタ - FET、MOSFET - シングル
Part B

2N7002K

レクトロンUSA

Lifecycle
Active
Stock
3271 個数
Package
SOT-23
Series
トランジスタ - FET、MOSFET - シングル

Key differences

Rows are prioritized by design impact. Highlighted values require attention during substitution.

Key electrical and mechanical differences between the two devices

Parameter 2N7002K 2N7002,215 Why it matters
Drain-Source Voltage (Vds) 60 V 60 V Maximum voltage the device can block; must meet or exceed circuit voltage for safe operation.
Continuous Drain Current (Id) 300 mA 300 mA Defines the maximum load current the MOSFET can handle continuously without damage.
Drain-Source On-Resistance (Rds(on)) 1.6 Ω @ Vgs=10V, Id=500mA 5 Ω @ Vgs=10V, Id=500mA Lower on-resistance reduces conduction losses and heat generation in switching applications.
Gate Threshold Voltage (Vgs(th)) 1.0 V to 2.5 V 1.0 V to 2.5 V Determines the minimum gate voltage needed to turn on the MOSFET; affects logic-level compatibility.
Gate-Source Voltage (Vgs) Max ±20 V ±20 V Maximum safe gate drive voltage; exceeding it can permanently damage the gate oxide.
Power Dissipation (Pd) 350 mW 830 mW Indicates how much power the package can dissipate; higher values allow more current or lower Rds(on) operation.
Input Capacitance (Ciss) 50 pF 50 pF Affects switching speed and gate drive requirements; lower capacitance enables faster switching.
Package / Mounting SOT-23 Surface Mount SOT-23 Surface Mount Physical form factor and mounting type must match the PCB footprint for direct replacement.
Operating Junction Temperature (Tj) -55 °C to +150 °C -55 °C to +150 °C Defines the safe thermal operating range; must cover the application's ambient and self-heating conditions.

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Send your BOM and application constraints for technical and sourcing review.

Full specification comparison

Use manufacturer datasheets as the final authority.

Specification 2N7002,215 2N7002K
Series TrenchMOS™ -
Part Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain(Id) @ 25°C 300mA (Ta) 300mA (Ta)
Drive Voltage(Max Rds On Min Rds On) 10V 5V, 10V
Rds On(Max) @ Id Vgs 5Ohm @ 500mA, 10V 2Ohm @ 500mA, 10V
Vgs(th)(Max) @ Id 2.5V @ 250µA 1.9V @ 250µA
Vgs(Max) ±30V ±20V
Input Capacitance(Ciss)(Max) @ Vds 50 pF @ 10 V 50 pF @ 25 V
Power Dissipation (Max) 830mW (Ta) 350mW (Ta)
Operating Temperature -65°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount

Frequently asked questions

What are the key differences between the 2N7002K and the 2N7002,215?

The 2N7002K is a specific part number variant of the 2N7002 N-channel MOSFET, while the 2N7002,215 is a distinct ordering code from Nexperia (formerly NXP) for the same 2N7002 MOSFET family. The primary differences lie in the manufacturer, package marking, and specific datasheet parameters such as drain-source on-resistance (RDS(on)) and gate threshold voltage (VGS(th)) ranges. The 2N7002K is often associated with a specific manufacturer's version (e.g., ON Semiconductor/Fairchild) with its own guaranteed limits, whereas the 2N7002,215 is the Nexperia version in a SOT-23 package with its own set of verified specifications.

Are the 2N7002K and 2N7002,215 pin-to-pin compatible?

Yes, both the 2N7002K and the 2N7002,215 are typically offered in the standard SOT-23 (TO-236AB) surface-mount package with the same pinout: Gate (Pin 1), Source (Pin 2), and Drain (Pin 3). This means they are pin-to-pin compatible in terms of footprint and pin function, allowing them to be placed on the same PCB land pattern.

Can the 2N7002K and 2N7002,215 be used interchangeably in a design?

They can be used interchangeably only after verifying that the electrical parameter differences do not affect the target application. Key parameters to compare include drain-source voltage (VDS), continuous drain current (ID), power dissipation (PD), RDS(on) at the specific gate-source voltage (VGS) used in the circuit, and VGS(th) limits. For example, if a design relies on a maximum RDS(on) that is guaranteed by one part but not the other, direct substitution may not be safe without validation.

What is the maximum drain-source voltage (VDS) for the 2N7002K and 2N7002,215?

Both the 2N7002K and the 2N7002,215 have a maximum drain-source voltage (VDS) rating of 60 V. This is a standard rating for the 2N7002 family and is consistent across verified manufacturer datasheets for these specific part numbers.

What is the continuous drain current (ID) rating for the 2N7002K and 2N7002,215?

The continuous drain current (ID) rating for both the 2N7002K and the 2N7002,215 is typically 115 mA at an ambient temperature of 25°C, with a pulsed drain current (IDM) rating of 800 mA. These values are subject to the specific manufacturer's datasheet and test conditions, but they are the commonly verified limits for these parts.

How does the gate threshold voltage (VGS(th)) compare between the 2N7002K and 2N7002,215?

The gate threshold voltage (VGS(th)) for both the 2N7002K and the 2N7002,215 is typically specified with a range of 1.0 V to 2.5 V at a drain current of 250 µA and VDS = VGS. However, the exact minimum, maximum, and test conditions can vary slightly between manufacturers. Designers should consult the specific datasheet for the exact part number being used to confirm the guaranteed limits.

What is the typical RDS(on) for the 2N7002K and 2N7002,215?

The typical RDS(on) for both the 2N7002K and the 2N7002,215 is approximately 1.2 Ω to 2.0 Ω at VGS = 10 V and ID = 500 mA, and higher at VGS = 4.5 V (often around 2.0 Ω to 3.0 Ω). The maximum guaranteed RDS(on) values differ between manufacturers and part variants, so the specific datasheet for the 2N7002K or 2N7002,215 must be consulted for worst-case design calculations.

Which manufacturers produce the 2N7002K and 2N7002,215?

The 2N7002K is commonly manufactured by ON Semiconductor (formerly Fairchild Semiconductor) and other second-source suppliers. The 2N7002,215 is a specific ordering code from Nexperia (formerly NXP Semiconductors). Both are widely available through authorized distributors such as DigiKey, Mouser, and TTI. Always verify the manufacturer and part number suffix when ordering to ensure the correct variant is received.