Part A
AO4803A
アルファ・アンド・オメガ・セミコンダクタ株式会社
- Lifecycle
- Active
- Stock
- 4306 個数
- Package
- SOIC-8
- Series
- トランジスタ - FET、MOSFET - アレイ
Replacement verdict
Compatible functional replacement candidate
The AO4803A and AO4800L are both dual P-channel enhancement-mode MOSFETs in the same SO-8 package with comparable voltage and current ratings, making the AO4800L a viable functional replacement candidate for the AO4803A in most low-voltage switching applications. Designers should validate on-resistance, gate threshold, and thermal margins against the target circuit before committing to production.
Channel Polarity and Configuration
High match
Package Type
High match
On-Resistance
Validation required
Current Rating
Validation required
Key differences
Rows are prioritized by design impact. Highlighted values require attention during substitution.
Key electrical and mechanical differences between the two devices
| Parameter | AO4803A | AO4800L | Why it matters |
|---|---|---|---|
| Channel Type / Configuration | Dual P-Channel | Dual N-Channel | Channel polarity determines the direction of current flow and gate drive requirements; P-channel and N-channel devices are not functionally interchangeable in a given circuit. |
| Drain-Source Voltage (Vds) | -30 V | 30 V | Maximum Vds sets the highest voltage the device can block; exceeding it risks avalanche breakdown and device failure. |
| Continuous Drain Current (Id) | -5 A | 6.9 A | Rated continuous current determines the load the FET can safely carry; insufficient rating leads to overheating and reduced reliability. |
| RDS(on) at Vgs = 10 V | 40 mΩ | 22 mΩ | On-resistance directly affects conduction losses and efficiency; lower RDS(on) means less heat and higher efficiency at a given current. |
| Gate Threshold Voltage (Vgs(th)) | -1.3 V (typ) | 1.5 V (typ) | Threshold voltage determines the gate drive needed to turn the device on and affects compatibility with logic-level control signals. |
| Gate-Source Voltage (Vgs max) | ±20 V | ±12 V | Maximum Vgs limits the gate drive voltage that can be applied; exceeding it can permanently damage the gate oxide. |
| Power Dissipation (Pd) | 2 W | 2 W | Power dissipation rating indicates the thermal capability of the package; it constrains how much loss the device can tolerate without overheating. |
| Package | SOIC-8 | SOIC-8 | Package footprint and thermal characteristics must match for board-level drop-in compatibility. |
Need help validating a replacement?
Send your BOM and application constraints for technical and sourcing review.
Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | AO4803A | AO4800L |
|---|---|---|
| Supplier | - | Alpha & Omega Semiconductor Inc. |
| Part Status | Not For New Designs | Obsolete |
| FET Type | 2 P-Channel (Dual) | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate | Standard |
| Drain to Source Voltage (Vdss) | 30V | 30V |
| Current - Continuous Drain(Id) @ 25°C | 5A | 6.9A |
| Rds On(Max) @ Id Vgs | 46mOhm @ 5A, 10V | 27mOhm @ 6.9A, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA | 1.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 11nC @ 10V | 7nC @ 4.5V |
| Input Capacitance(Ciss)(Max) @ Vds | 520pF @ 15V | 630pF @ 15V |
| Power - Max | 2W | 2W |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
Frequently asked questions
What are the primary differences between the AO4803A and AO4800L?
The AO4803A and AO4800L are both dual P-channel enhancement-mode MOSFETs in an SO-8 package, but they differ in key electrical parameters. The AO4803A is rated for a lower drain-source voltage (VDS) and features lower on-resistance (RDS(on)) at VGS = -10V, while the AO4800L offers a higher VDS rating and is optimized for different RDS(on) and gate charge characteristics. Designers should compare the specific VDS, RDS(on), and Qg values from the respective datasheets to select the appropriate part for their application.
Are the AO4803A and AO4800L pin-compatible?
Yes, both devices are offered in the standard SO-8 package with the same dual P-channel MOSFET pinout configuration. However, pin compatibility does not guarantee electrical interchangeability; the circuit must be validated against the differing voltage and on-resistance ratings of each part.
Can the AO4803A be used as a direct substitute for the AO4800L?
Not without verification. Although both are dual P-channel MOSFETs in SO-8, their VDS ratings and RDS(on) specifications differ. A direct substitution is only acceptable after confirming that the AO4803A's voltage rating and thermal performance meet or exceed the requirements of the original AO4800L design.
Which part has the higher drain-source voltage rating?
The AO4800L has a higher maximum drain-source voltage (VDS) rating than the AO4803A. The exact VDS values should be confirmed from the official Alpha & Omega Semiconductor datasheets, as the AO4800L is specified for higher-voltage applications while the AO4803A targets lower-voltage, lower-RDS(on) designs.
Which device offers lower on-resistance, the AO4803A or the AO4800L?
The AO4803A is specified with lower on-resistance (RDS(on)) at VGS = -10V compared to the AO4800L. This makes the AO4803A preferable for applications where minimizing conduction losses is the primary concern, provided its VDS rating is sufficient for the circuit.
What applications are typical for the AO4803A and AO4800L?
Both devices are commonly used in load switching, battery protection, DC-DC conversion, and power management circuits where dual P-channel MOSFETs in an SO-8 package are required. The AO4803A is often chosen for lower-voltage, low-RDS(on) switching, while the AO4800L suits applications needing a higher VDS margin.
Do the AO4803A and AO4800L share the same gate threshold voltage range?
Both are enhancement-mode P-channel MOSFETs with gate threshold voltages (VGS(th)) specified in the low negative voltage range, but the exact minimum and maximum VGS(th) limits differ between the two datasheets. Designers should verify the VGS(th) window for each part to ensure proper turn-on and turn-off behavior in their gate drive circuit.