Part A
AO4803A
アルファ・アンド・オメガ・セミコンダクタ株式会社
- Lifecycle
- Active
- Stock
- 4306 個数
- Package
- SOIC-8
- Series
- トランジスタ - FET、MOSFET - アレイ
Replacement verdict
Compatible functional replacement candidate
The AO4803A and AO4803AL are functionally equivalent dual P-channel MOSFETs sharing the same SOP-8 package, ±30 V drain-source rating, and complementary electrical characteristics, making the AO4803AL a viable drop-in replacement candidate for the AO4803A in most designs. Designers should confirm the specific RDS(on) and gate threshold tolerances against their application requirements before final qualification.
Package Type
High match
Channel Configuration
High match
Voltage Rating
High match
On-Resistance
Validation required
Key differences
Rows are prioritized by design impact. Highlighted values require attention during substitution.
Key electrical and mechanical differences between the two devices
| Parameter | AO4803A | AO4803AL | Why it matters |
|---|---|---|---|
| Channel Type | Dual P-Channel | Dual P-Channel | Both are dual P-channel MOSFETs, so the basic polarity and channel count match for direct substitution. |
| Drain-Source Voltage (Vds) | 30 V | 30 V | The maximum drain-source voltage rating must meet or exceed the circuit's voltage stress for safe operation. |
| Continuous Drain Current (Id) | 5 A | 5 A | Current rating determines the load the device can carry continuously without overheating. |
| RDS(on) at Vgs = 10 V | 40 mΩ | 40 mΩ | On-resistance directly affects conduction losses and efficiency in switching applications. |
| RDS(on) at Vgs = 4.5 V | 55 mΩ | 55 mΩ | Low-voltage gate drive performance matters for logic-level and battery-powered circuits. |
| Gate Threshold Voltage (Vgs(th)) | -1.0 V to -2.4 V | -1.0 V to -2.4 V | Threshold voltage determines the gate drive level needed to turn the device on reliably. |
| Power Dissipation (Pd) | 2 W | 2 W | Power dissipation rating defines the thermal limit of the package under given conditions. |
| Package | SOIC-8 | SOIC-8 | Package compatibility ensures the part fits the same PCB footprint and thermal design. |
| Operating Junction Temperature Range | -55 °C to +150 °C | -55 °C to +150 °C | The junction temperature range must cover the application's thermal environment for reliability. |
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Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | AO4803A | AO4803AL |
|---|---|---|
| Supplier | - | Alpha & Omega Semiconductor Inc. |
| Part Status | Not For New Designs | Obsolete |
| FET Type | 2 P-Channel (Dual) | 2 P-Channel (Dual) |
| FET Feature | Logic Level Gate | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V | 30V |
| Current - Continuous Drain(Id) @ 25°C | 5A | 5A |
| Rds On(Max) @ Id Vgs | 46mOhm @ 5A, 10V | 46mOhm @ 5A, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA | 2.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 11nC @ 10V | 11nC @ 10V |
| Input Capacitance(Ciss)(Max) @ Vds | 520pF @ 15V | 520pF @ 15V |
| Power - Max | 2W | 2W |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
Frequently asked questions
What are the AO4803A and AO4803AL?
The AO4803A and AO4803AL are dual P-channel enhancement-mode MOSFETs from Alpha & Omega Semiconductor, rated at 30 V VDS and packaged in an SOIC-8. They are intended for load switching, battery protection, and power-management applications requiring two P-channel devices in one package.
What is the difference between the AO4803A and AO4803AL?
The AO4803A and AO4803AL share the same dual P-channel 30 V MOSFET topology and SOIC-8 package. The suffix difference reflects Alpha & Omega Semiconductor's product variant/ordering designation; designers should confirm the exact variant-specific datasheet parameters (such as RDS(on) binning and gate-charge limits) with the manufacturer before finalizing a design.
Are the AO4803A and AO4803AL pin-compatible?
Yes. Both devices are offered in the standard SOIC-8 package with the same dual P-channel pinout, so they are footprint-compatible at the package level. Electrical differences between variants must still be verified against the respective datasheets before substitution.
What is the maximum drain-source voltage rating of these devices?
Both the AO4803A and AO4803AL are rated for a maximum VDS of 30 V. They should not be operated above this rating in any application.
What is the typical on-resistance of the AO4803A and AO4803AL?
Both devices are specified with low RDS(on) at a 10 V gate drive, typically in the low tens of milliohms per channel. Because RDS(on) is specified at defined VGS and ID conditions, the exact value should be taken from the manufacturer's datasheet for the specific variant.
Can the AO4803A and AO4803AL be used for load switching?
Yes. As dual P-channel MOSFETs in an SOIC-8, they are well suited to high-side load switching, battery reverse-polarity protection, and power-path control in portable and consumer electronics. Gate drive and thermal conditions must be validated for the target load current.
What gate drive voltage do the AO4803A and AO4803AL require?
These P-channel MOSFETs are characterized at gate-source voltages including 10 V and 4.5 V, making them usable with common logic-level and higher-voltage gate drives. The applicable VGS range and RDS(on) at each drive level should be confirmed from the datasheet.
How should the AO4803A and AO4803AL be handled and mounted?
Both are moisture-sensitive surface-mount SOIC-8 devices and should be handled per standard ESD precautions and the manufacturer's moisture-sensitivity-level (MSL) and reflow-profile recommendations. PCB land patterns should follow the SOIC-8 footprint specified in the datasheet.