Part A
AO4803A
アルファ・アンド・オメガ・セミコンダクタ株式会社
- Lifecycle
- Active
- Stock
- 4306 個数
- Package
- SOIC-8
- Series
- トランジスタ - FET、MOSFET - アレイ
Replacement verdict
Compatible functional replacement candidate
The AO4803A and AO4801AL are both dual P-channel enhancement-mode MOSFETs in the same SO-8 package with comparable voltage and current ratings, making the AO4801AL a viable functional replacement candidate for the AO4803A in many designs. However, on-resistance and gate-threshold characteristics differ, so verification against the target application's drive voltage and thermal budget is recommended before committing to substitution.
Channel Configuration
High match
Package Type
High match
Voltage Rating
Validation required
On-Resistance
Validation required
Key differences
Rows are prioritized by design impact. Highlighted values require attention during substitution.
Key electrical and mechanical differences between the two devices
| Parameter | AO4803A | AO4801AL | Why it matters |
|---|---|---|---|
| Channel Type / Configuration | Dual P-Channel | Dual P-Channel | Both are dual P-channel MOSFETs, so the channel configuration is compatible for substitution in complementary or load-switch circuits. |
| Drain-Source Voltage (Vds) | -30 V | -30 V | The maximum drain-source voltage rating must meet or exceed the circuit's applied voltage to avoid breakdown. |
| Continuous Drain Current (Id) | -5 A | -5 A | The continuous current rating determines how much load current the device can carry without overheating. |
| RDS(on) at Vgs = -10 V | 46 mΩ (max) | 50 mΩ (max) | Lower on-resistance reduces conduction losses and heat generation; a small difference affects efficiency and thermal margin. |
| RDS(on) at Vgs = -4.5 V | 60 mΩ (max) | 65 mΩ (max) | The 4.5 V on-resistance indicates performance when driven by low-voltage logic, which is common in portable designs. |
| Gate Threshold Voltage (Vgs(th)) | -1.0 V to -2.4 V | -1.0 V to -2.4 V | The threshold voltage determines the gate drive level needed to turn the device on reliably. |
| Gate Charge (Qg) | 9.5 nC (typ, at -10 V) | 11 nC (typ, at -10 V) | Lower gate charge enables faster switching and reduces gate-drive power, affecting switching losses and driver requirements. |
| Power Dissipation (Pd) | 2 W | 2 W | The maximum power dissipation rating defines the thermal limit of the package under given conditions. |
| Package / Mounting | SOIC-8 (Surface Mount) | SOIC-8 (Surface Mount) | Matching package and footprint ensures the part is physically drop-in compatible on the PCB. |
Need help validating a replacement?
Send your BOM and application constraints for technical and sourcing review.
Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | AO4803A | AO4801AL |
|---|---|---|
| Supplier | - | Alpha & Omega Semiconductor Inc. |
| Part Status | Not For New Designs | Obsolete |
| FET Type | 2 P-Channel (Dual) | 2 P-Channel (Dual) |
| FET Feature | Logic Level Gate | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V | 30V |
| Current - Continuous Drain(Id) @ 25°C | 5A | 5A |
| Rds On(Max) @ Id Vgs | 46mOhm @ 5A, 10V | 48mOhm @ 5A, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA | 1.3V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 11nC @ 10V | 9nC @ 4.5V |
| Input Capacitance(Ciss)(Max) @ Vds | 520pF @ 15V | 780pF @ 15V |
| Power - Max | 2W | 2W |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
Frequently asked questions
What are the primary differences between the AO4803A and AO4801AL?
The AO4803A is a dual P-channel enhancement-mode MOSFET rated at -30V VDS, while the AO4801AL is a dual P-channel MOSFET rated at -30V VDS with a lower on-resistance specification. Both are offered in SOIC-8 packages, but their RDS(on), gate charge, and current ratings differ, so they are not drop-in equivalents without design verification.
Are the AO4803A and AO4801AL pin-compatible?
Both devices are dual P-channel MOSFETs in an SOIC-8 package with the same standard dual-MOSFET pinout (two independent P-channel devices per package). Pin functions and land patterns are compatible, but electrical differences must be validated before substitution.
What is the drain-source voltage rating of each device?
Both the AO4803A and AO4801AL are rated for a maximum drain-source voltage (VDS) of -30V, making them suitable for low-voltage P-channel switching applications such as load switches and battery protection circuits.
How do the on-resistance specifications compare?
The AO4801AL specifies a lower RDS(on) than the AO4803A at the same gate-source drive, which reduces conduction losses. Designers should consult the respective manufacturer datasheets for the exact RDS(on) values at the specific VGS used in their circuit.
Can the AO4803A and AO4801AL be used interchangeably in a design?
They should not be treated as direct substitutes without evaluation. Although both are -30V dual P-channel MOSFETs in SOIC-8, differences in RDS(on), gate charge, and current handling can affect thermal performance and switching behavior, so the target design must be validated against the datasheet parameters of the replacement part.
What package do the AO4803A and AO4801AL use?
Both devices are supplied in the SOIC-8 surface-mount package, which supports standard PCB assembly processes and allows the same footprint to be used for either part.
What applications are these dual P-channel MOSFETs suited for?
Both the AO4803A and AO4801AL are intended for low-voltage P-channel switching applications, including load switches, power management, battery protection, and level-shifting circuits, where a -30V VDS rating and dual-device SOIC-8 package are appropriate.