仕様
| 属性 | 値 |
| Supplier | Microchip Technology |
| Package / Case | Bulk |
| Series | POWER MOS 8™ |
| Part Status | Obsolete |
| FET Type | 2 N-Channel (Dual) Asymmetrical |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain(Id) @ 25°C | 51A |
| Rds On(Max) @ Id Vgs | 78mOhm @ 42A, 10V |
| Vgs(th)(Max) @ Id | 5V @ 2.5mA |
| Gate Charge(Qg)(Max) @ Vgs | 340nC @ 10V |
| Input Capacitance(Ciss)(Max) @ Vds | 10800pF @ 25V |
| Power - Max | 390W |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
