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IRF7341TRPBF
+BOMMOSFET 2N-CH 55V 4.7A 8-SOIC
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メーカーインフィニオンテクノロジーズ
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メーカー品番 #IRF7341TRPBF
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データシート IRF7341TRPBF DataSheet
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パッケージ SO-8
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在庫状況4836
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain(Id) @ 25°C | 4.7A |
| Rds On(Max) @ Id Vgs | 50mOhm @ 4.7A, 10V |
| Vgs(th)(Max) @ Id | 1V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 36nC @ 10V |
| Input Capacitance(Ciss)(Max) @ Vds | 740pF @ 25V |
| Power - Max | 2W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
概要
Description
The IRF7341TRPBF is a dual N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. It is designed for efficient performance in power management and switching applications. Key features include a low on-resistance, which minimizes power loss, and a fast switching speed, aiding in improved efficiency. The device is housed in a compact SO-8 package, making it suitable for applications where space is limited.
This MOSFET is commonly used in DC-DC converters, motor control circuits, and load switching. Its dual configuration allows for efficient handling of two separate loads or can be used in complementary arrangements. The IRF7341TRPBF operates over a wide temperature range, providing reliability in various environments. It is RoHS compliant, ensuring it meets environmental standards for electronic components. The MOSFET's robust design makes it ideal for applications requiring durable and consistent performance.
This MOSFET is commonly used in DC-DC converters, motor control circuits, and load switching. Its dual configuration allows for efficient handling of two separate loads or can be used in complementary arrangements. The IRF7341TRPBF operates over a wide temperature range, providing reliability in various environments. It is RoHS compliant, ensuring it meets environmental standards for electronic components. The MOSFET's robust design makes it ideal for applications requiring durable and consistent performance.
Equivalent
The IRF7341TRPBF is a dual N-channel MOSFET commonly used in power management applications. Equivalent products include:
1. FDG6303N - Fairchild Semiconductor
2. Si4925DY - Vishay
3. NTMS4N02R2 - ON Semiconductor
4. BSS138 - NXP (for lower current applications)
Please verify specifications such as voltage, current, and package type to ensure compatibility with your application.
1. FDG6303N - Fairchild Semiconductor
2. Si4925DY - Vishay
3. NTMS4N02R2 - ON Semiconductor
4. BSS138 - NXP (for lower current applications)
Please verify specifications such as voltage, current, and package type to ensure compatibility with your application.
Features
The IRF7341TRPBF is a dual N-channel MOSFET designed for power management applications. Key features include:
1. Dual N-Channel MOSFET: Contains two MOSFETs in a single package, facilitating compact designs.
2. Low On-Resistance: Offers low R_DS(on), ensuring efficient operation with minimal power loss.
3. Fast Switching Speed: Provides quick transition times, which is beneficial for high-frequency applications.
4. Compact Package: Available in a Surface-Mount (SMD) package, aiding in space-saving on PCBs.
5. High Current Capability: Designed to handle significant current levels, suitable for various power applications.
6. Logic Level Gate Drive: Compatible with low voltage gate drive, making it versatile in digital circuit applications.
7. Thermal Performance: Efficient thermal characteristics, improving reliability and performance under load.
8. Lead-Free and RoHS Compliant: Environmentally friendly design, adhering to industry standards for hazardous substances.
These features make the IRF7341TRPBF ideal for applications like DC-DC converters, power management in portable devices, and other electronic systems requiring efficient power handling.
1. Dual N-Channel MOSFET: Contains two MOSFETs in a single package, facilitating compact designs.
2. Low On-Resistance: Offers low R_DS(on), ensuring efficient operation with minimal power loss.
3. Fast Switching Speed: Provides quick transition times, which is beneficial for high-frequency applications.
4. Compact Package: Available in a Surface-Mount (SMD) package, aiding in space-saving on PCBs.
5. High Current Capability: Designed to handle significant current levels, suitable for various power applications.
6. Logic Level Gate Drive: Compatible with low voltage gate drive, making it versatile in digital circuit applications.
7. Thermal Performance: Efficient thermal characteristics, improving reliability and performance under load.
8. Lead-Free and RoHS Compliant: Environmentally friendly design, adhering to industry standards for hazardous substances.
These features make the IRF7341TRPBF ideal for applications like DC-DC converters, power management in portable devices, and other electronic systems requiring efficient power handling.
Pinout
The IRF7341TRPBF is a dual N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) known for its efficiency in power management applications. It is typically used for switching and amplification purposes.
This component comes in an 8-pin SOIC (Small Outline Integrated Circuit) package. Here is a brief overview of its pin functions:
1. Pin 1 (G1): Gate of MOSFET 1
2. Pin 2 (S1): Source of MOSFET 1
3. Pin 3 (S1): Source of MOSFET 1 (connected internally to Pin 2)
4. Pin 4 (G2): Gate of MOSFET 2
5. Pin 5 (S2): Source of MOSFET 2
6. Pin 6 (S2): Source of MOSFET 2 (connected internally to Pin 5)
7. Pin 7 (D2): Drain of MOSFET 2
8. Pin 8 (D1): Drain of MOSFET 1
This configuration allows the IRF7341TRPBF to efficiently handle power switching tasks while conserving space on the PCB (Printed Circuit Board).
This component comes in an 8-pin SOIC (Small Outline Integrated Circuit) package. Here is a brief overview of its pin functions:
1. Pin 1 (G1): Gate of MOSFET 1
2. Pin 2 (S1): Source of MOSFET 1
3. Pin 3 (S1): Source of MOSFET 1 (connected internally to Pin 2)
4. Pin 4 (G2): Gate of MOSFET 2
5. Pin 5 (S2): Source of MOSFET 2
6. Pin 6 (S2): Source of MOSFET 2 (connected internally to Pin 5)
7. Pin 7 (D2): Drain of MOSFET 2
8. Pin 8 (D1): Drain of MOSFET 1
This configuration allows the IRF7341TRPBF to efficiently handle power switching tasks while conserving space on the PCB (Printed Circuit Board).
Manufacturer
The IRF7341TRPBF is manufactured by Infineon Technologies AG. Infineon is a German semiconductor company that specializes in the design and production of a wide range of semiconductor devices. The company focuses on automotive, industrial power control, power management and multimarket, and digital security solutions. Infineon is known for its expertise in power semiconductors, microcontrollers, sensors, and security ICs, serving diverse sectors such as automotive, industrial, consumer electronics, and communication.
Application
The IRF7341TRPBF is a dual N-channel MOSFET commonly used in various applications, including DC-DC converters, power management systems, load switching, and motor control. Its key characteristics, such as low on-resistance and fast switching capabilities, make it suitable for efficient power delivery and conversion in portable electronics, automotive systems, and telecom equipment. Additionally, it's often used in battery-operated devices for power saving and in industrial applications where reliable power switching is essential.
Package
The IRF7341TRPBF is a dual N-channel MOSFET housed in a SO-8 (Small Outline-8) package, which is commonly used for surface-mount applications.
