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IRF7351TRPBF
+BOMMOSFET 2N-CH 60V 8A 8-SOIC
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メーカーインフィニオンテクノロジーズ
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メーカー品番 #IRF7351TRPBF
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データシート IRF7351TRPBF DataSheet
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パッケージ SO-8
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在庫状況1607
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain(Id) @ 25°C | 8A |
| Rds On(Max) @ Id Vgs | 17.8mOhm @ 8A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 50µA |
| Gate Charge(Qg)(Max) @ Vgs | 36nC @ 10V |
| Input Capacitance(Ciss)(Max) @ Vds | 1330pF @ 30V |
| Power - Max | 2W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
概要
Description
The IRF7351TRPBF is a dual N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-speed, high-efficiency power switching applications. It is manufactured by Infineon Technologies. The device features two MOSFETs in a single package, which allows for compact designs and efficient use of board space. It is commonly used in applications such as DC-DC converters, load switching, and power management in various electronic devices.
Key specifications of the IRF7351TRPBF include a low on-resistance, which minimizes power loss and heat generation, and a high threshold voltage, ensuring that it operates effectively under various load conditions. It is housed in a surface-mount SO-8 package, making it suitable for automated assembly and integration into small form-factor designs. The device is optimized for fast switching and offers reliable performance across a broad range of temperatures.
Overall, the IRF7351TRPBF is valued for its efficiency, compactness, and reliability in power switching applications.
Key specifications of the IRF7351TRPBF include a low on-resistance, which minimizes power loss and heat generation, and a high threshold voltage, ensuring that it operates effectively under various load conditions. It is housed in a surface-mount SO-8 package, making it suitable for automated assembly and integration into small form-factor designs. The device is optimized for fast switching and offers reliable performance across a broad range of temperatures.
Overall, the IRF7351TRPBF is valued for its efficiency, compactness, and reliability in power switching applications.
Equivalent
The IRF7351TRPBF is a dual N-channel MOSFET. Equivalent products include:
1. NXP PSMN1R2-25YLC
2. Vishay Si4936DY
3. ON Semiconductor NTMFS4935NT1G
4. Infineon BSC026N04LS
These alternatives may vary in specific electrical characteristics and package types, so it's important to verify compatibility with your application. Always consult datasheets for detailed specifications.
1. NXP PSMN1R2-25YLC
2. Vishay Si4936DY
3. ON Semiconductor NTMFS4935NT1G
4. Infineon BSC026N04LS
These alternatives may vary in specific electrical characteristics and package types, so it's important to verify compatibility with your application. Always consult datasheets for detailed specifications.
Features
The IRF7351TRPBF is a dual N-channel MOSFET designed for applications requiring efficient power management. Key features include:
1. Voltage and Current Ratings: It has a maximum drain-to-source voltage (V_DS) of 30V and a continuous drain current (I_D) of up to 7.5A.
2. Low On-Resistance: The device offers a low on-resistance (R_DS(on)) of approximately 0.022 ohms, enhancing performance by reducing power loss.
3. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 1.0V to 2.5V, facilitating easy driving with lower voltages.
4. Package Type: It is housed in a compact SO-8 package, ideal for space-constrained applications.
5. Thermal Performance: It provides good thermal performance owing to its efficient package design that supports better heat dissipation.
6. Applications: Commonly used in DC-DC converters, load switches, and power management for portable and battery-powered devices.
These features make it suitable for high-efficiency and compact-sized electronic applications.
1. Voltage and Current Ratings: It has a maximum drain-to-source voltage (V_DS) of 30V and a continuous drain current (I_D) of up to 7.5A.
2. Low On-Resistance: The device offers a low on-resistance (R_DS(on)) of approximately 0.022 ohms, enhancing performance by reducing power loss.
3. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 1.0V to 2.5V, facilitating easy driving with lower voltages.
4. Package Type: It is housed in a compact SO-8 package, ideal for space-constrained applications.
5. Thermal Performance: It provides good thermal performance owing to its efficient package design that supports better heat dissipation.
6. Applications: Commonly used in DC-DC converters, load switches, and power management for portable and battery-powered devices.
These features make it suitable for high-efficiency and compact-sized electronic applications.
Pinout
The IRF7351TRPBF is a dual N-channel MOSFET with a total of 8 pins. It is designed for applications requiring efficient switching and amplification. The key functions and pin configuration are as follows:
1. Pin 1 & 8 (Drain1 & Drain2): These are connected to the drains of the MOSFETs. They are used for the main current flow from drain to source when the MOSFETs are activated.
2. Pin 2 & 7 (Gate1 & Gate2): These pins control the gates of the two MOSFETs. Applying a voltage here turns the MOSFETs on or off.
3. Pin 3 & 6 (Source1 & Source2): These are the sources of the MOSFETs. Current flows from these pins to the corresponding drain pins when the MOSFETs are on.
4. Pin 4 & 5 (Substrate or Common Source): These are typically connected internally and serve as a common source or substrate connection for both transistors.
This MOSFET is commonly used in power management applications, DC-DC converters, and loads requiring efficient switching.
1. Pin 1 & 8 (Drain1 & Drain2): These are connected to the drains of the MOSFETs. They are used for the main current flow from drain to source when the MOSFETs are activated.
2. Pin 2 & 7 (Gate1 & Gate2): These pins control the gates of the two MOSFETs. Applying a voltage here turns the MOSFETs on or off.
3. Pin 3 & 6 (Source1 & Source2): These are the sources of the MOSFETs. Current flows from these pins to the corresponding drain pins when the MOSFETs are on.
4. Pin 4 & 5 (Substrate or Common Source): These are typically connected internally and serve as a common source or substrate connection for both transistors.
This MOSFET is commonly used in power management applications, DC-DC converters, and loads requiring efficient switching.
Manufacturer
The IRF7351TRPBF is manufactured by Infineon Technologies. Infineon is a German semiconductor manufacturer that specializes in a variety of electronic components, including power semiconductors, microcontrollers, sensors, and security products. The company is known for its innovations in energy efficiency, mobility, and security. It serves diverse markets, including automotive, industrial, consumer electronics, and communication technologies.
Application
The IRF7351TRPBF is a dual N-channel MOSFET commonly used in applications such as power management, DC-DC converters, and load switching. Its low on-resistance and fast switching capabilities make it suitable for improving efficiency in power supply circuits. It is also used in motor control systems, battery-powered devices, and electronic control units (ECUs) where compact and efficient power handling is required. The dual configuration allows for space-saving designs in applications that require multiple MOSFETs.
Package
The IRF7351TRPBF is a dual N-channel MOSFET housed in an SO-8 package. This surface-mount package is compact, making it suitable for applications requiring space-efficient designs, such as power management in portable devices.
