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IRFI4020H-117P
+BOMMOSFET 2N-CH 200V 9.1A TO-220FP
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メーカーインフィニオンテクノロジーズ
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メーカー品番 #IRFI4020H-117P
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データシート IRFI4020H-117P DataSheet
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パッケージ TO-220-5
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在庫状況4379
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Supplier | Infineon Technologies |
| Package / Case | Tube |
| Part Status | Obsolete |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain(Id) @ 25°C | 9.1A |
| Rds On(Max) @ Id Vgs | 100mOhm @ 5.5A, 10V |
| Vgs(th)(Max) @ Id | 4.9V @ 100µA |
| Gate Charge(Qg)(Max) @ Vgs | 29nC @ 10V |
| Input Capacitance(Ciss)(Max) @ Vds | 1240pF @ 25V |
| Power - Max | 21W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
概要
Description
The IRFI4020H-117P is a specific model of Insulated Gate Bipolar Transistor (IGBT). IGBTs are semiconductor devices commonly used in power electronics for switching applications. They combine the high efficiency and fast switching of a Power MOSFET with the high-voltage and high-current handling capabilities of a bipolar transistor.
Key features of the IRFI4020H-117P include:
1. High Voltage & Current Ratings: Suitable for applications requiring robust power management.
2. Fast Switching: Allows for efficient power conversion, reducing energy losses in switching operations.
3. Low On-State Voltage Drop: Enhances overall system efficiency by minimizing power loss during conduction.
4. Rugged Design: Resilient against high voltages and currents, making it ideal for industrial use.
Typical applications include motor drives, inverters, and power supply units. Its robust performance and efficiency make it ideal for enhancing the performance and reliability of high-power electronic circuits. Always consult the datasheet for detailed specifications before integrating it into your design.
Key features of the IRFI4020H-117P include:
1. High Voltage & Current Ratings: Suitable for applications requiring robust power management.
2. Fast Switching: Allows for efficient power conversion, reducing energy losses in switching operations.
3. Low On-State Voltage Drop: Enhances overall system efficiency by minimizing power loss during conduction.
4. Rugged Design: Resilient against high voltages and currents, making it ideal for industrial use.
Typical applications include motor drives, inverters, and power supply units. Its robust performance and efficiency make it ideal for enhancing the performance and reliability of high-power electronic circuits. Always consult the datasheet for detailed specifications before integrating it into your design.
Equivalent
The IRFI4020H-117P is a HEXFET power MOSFET. Equivalent products are those with similar specifications and characteristics. Some possible alternatives include:
1. STMicroelectronics STP20NF10
2. NXP Semiconductors PSMN012-100Y
3. Infineon Technologies IPP110N10N3 G
Ensure to verify the specifications such as voltage, current rating, and package type when considering alternatives.
1. STMicroelectronics STP20NF10
2. NXP Semiconductors PSMN012-100Y
3. Infineon Technologies IPP110N10N3 G
Ensure to verify the specifications such as voltage, current rating, and package type when considering alternatives.
Features
The IRFI4020H-117P is a power MOSFET designed for various applications requiring efficient power management and high-speed switching. Key features include:
1. N-Channel MOSFET: It uses an N-channel enhancement mode, which is typical for efficient high-frequency switching.
2. VDSS: Has a drain-source breakdown voltage of 200V, making it suitable for medium-voltage applications.
3. Current Handling: Capable of handling continuous drain current up to 17A, providing flexibility for different load requirements.
4. RDS(on): Low on-resistance of about 0.15 ohms, which minimizes power loss and enhances efficiency.
5. Fast Switching: Designed for high-speed performance, suitable for applications like motor drives and power supply circuits.
6. Thermal Performance: Comes in a TO-220 package, which aids in effective heat dissipation.
7. Lead-Free: Environmentally friendly as it is RoHS compliant, free from lead and other hazardous substances.
These features make the IRFI4020H-117P a reliable choice for designers looking to optimize power efficiency and performance in their electronic devices.
1. N-Channel MOSFET: It uses an N-channel enhancement mode, which is typical for efficient high-frequency switching.
2. VDSS: Has a drain-source breakdown voltage of 200V, making it suitable for medium-voltage applications.
3. Current Handling: Capable of handling continuous drain current up to 17A, providing flexibility for different load requirements.
4. RDS(on): Low on-resistance of about 0.15 ohms, which minimizes power loss and enhances efficiency.
5. Fast Switching: Designed for high-speed performance, suitable for applications like motor drives and power supply circuits.
6. Thermal Performance: Comes in a TO-220 package, which aids in effective heat dissipation.
7. Lead-Free: Environmentally friendly as it is RoHS compliant, free from lead and other hazardous substances.
These features make the IRFI4020H-117P a reliable choice for designers looking to optimize power efficiency and performance in their electronic devices.
Pinout
The IRFI4020H-117P is an N-channel MOSFET. It typically has three main pins: Gate (G), Drain (D), and Source (S). The pin count and arrangement may vary slightly depending on the package type, but for a standard TO-220 or similar package, these three pins are commonly used.
1. Gate (G): This pin is used to control the conductivity between the Drain and Source. A voltage applied to the Gate allows current to flow between the Drain and Source.
2. Drain (D): The Drain is the terminal through which the current flows into the MOSFET from the load.
3. Source (S): The Source is the terminal through which the current exits the MOSFET.
The specific pin configuration should be verified with the datasheet of the IRFI4020H-117P for the exact package type you are using. These components are widely used in power management applications due to their efficiency and switching speed.
1. Gate (G): This pin is used to control the conductivity between the Drain and Source. A voltage applied to the Gate allows current to flow between the Drain and Source.
2. Drain (D): The Drain is the terminal through which the current flows into the MOSFET from the load.
3. Source (S): The Source is the terminal through which the current exits the MOSFET.
The specific pin configuration should be verified with the datasheet of the IRFI4020H-117P for the exact package type you are using. These components are widely used in power management applications due to their efficiency and switching speed.
Manufacturer
The IRFI4020H-117P is manufactured by Infineon Technologies. Infineon is a German semiconductor manufacturer that specializes in a wide range of electronic products, including power semiconductors, microcontrollers, security ICs, and sensors. The company is known for its innovations in automotive, industrial power control, power management, and digital security solutions. Infineon's products are widely used in various applications, such as automotive electronics, industrial automation, consumer electronics, and communication technologies. The company plays a significant role in supporting trends like electrification, digitalization, and energy efficiency across multiple industries.
Application
The IRFI4020H-117P is a Power MOSFET used primarily in high-efficiency power conversion applications. It is suitable for use in switching power supplies, motor drives, and inductive loads. Its fast switching capabilities make it ideal for applications requiring high-speed operation, such as inverters, converters, and DC-DC power supplies. Additionally, the IRFI4020H-117P can be used in automotive and industrial applications where robust performance and reliability are crucial. Its low on-resistance and high current handling also make it suitable for applications involving battery management and renewable energy systems.
Package
The IRFI4020H-117P is an insulated-gate bipolar transistor (IGBT) in a TO-220 package. The TO-220 package is a widely used type of semiconductor package featuring a metal tab for heat dissipation and three leads.
