画像は参考用です
STF10N105K5
+BOMMOSFET N-CH 1050V 6A TO220FP
-
メーカーRFE/フューゼテック
-
メーカー品番 #STF10N105K5
-
データシート STF10N105K5 DataSheet
-
在庫状況5541
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Series | MDmesh™ K5 |
| Part Status | Active |
| Base Product Number | STF10 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 1050 V |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 1.3Ohm @ 3A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs | 21.5 nC @ 10 V |
| Vgs (Max) | 30V |
| Input Capacitance (Ciss) (Max) @ Vds | 545 pF @ 100 V |
| Power Dissipation (Max) | 30W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220FP |
| Package | TO-220-3 Full Pack |
| Packaging | Tube |
概要
Description
Key specifications for the STF10N105K5 include a maximum drain-source voltage (V_DS) of 1050 volts, a continuous drain current (I_D) of around 7.2 amperes, and low gate charge characteristics. The device is designed to provide fast switching speeds and low on-resistance (R_DS(on)), which helps in reducing power dissipation and enhancing overall system efficiency.
The MOSFET is usually packaged in a TO-220FP (Full-Pak) package, providing good thermal performance and insulation. Its robustness and reliability make it suitable for demanding industrial and consumer electronics applications where efficiency and thermal management are critical.
Equivalent
1. STMicroelectronics STB11N80K5 - Comparable performance and breakdown voltage.
2. Infineon IPP110N10N3 - Similar current and voltage ratings.
3. Vishay SiHP10N100 - Equivalent in terms of current and voltage handling.
4. Fairchild (now ON Semiconductor) FDPF12N10 - Close match in technical specifications.
Always verify specifications to ensure compatibility with your application.
Features
1. Voltage Rating: It has a drain-source voltage (V_DS) rating of 1050V, making it suitable for high-voltage applications.
2. Current Capacity: The MOSFET can handle a continuous drain current (I_D) of up to 10A.
3. R_DS(on): It features a low on-resistance, which helps in reducing power loss and improving efficiency. This is typically specified in the datasheet under specific conditions.
4. Package: The device is available in a TO-220 package, which provides good thermal performance and is suitable for through-hole mounting.
5. Temperature Range: It operates efficiently over a wide temperature range, ensuring reliability under various environmental conditions.
6. Applications: Commonly used in power management, switching power supplies, and other applications requiring efficient power conversion.
These features make the STF10N105K5 an attractive choice for designers looking for a robust, high-voltage switching device.
Pinout
1. Gate (G): This pin controls the MOSFET's operation. A voltage applied to the gate controls the current flow between the drain and source.
2. Drain (D): The drain is the terminal through which the main current flows from the power source when the MOSFET is turned on.
3. Source (S): The source is the terminal through which the current exits the MOSFET back to the ground or the circuit.
The STF10N105K5 is used in applications requiring high efficiency and fast switching, such as in power supplies and converters. It is characterized by a low on-state resistance and high-speed switching capabilities.
Manufacturer
Application
1. Power Supply Units: Used in switched-mode power supplies for computers and consumer electronics.
2. DC-DC Converters: Essential in voltage regulation applications.
3. Motor Control: Employed in driving motors in industrial and automotive applications.
4. Lighting: Utilized in LED drivers for efficient lighting solutions.
5. Battery Management: Plays a role in battery protection and management circuits.
6. Inverters: Used in solar inverters and uninterrupted power supplies (UPS).
These applications leverage its capabilities for efficient power handling and thermal performance.