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STP110N8F6
+BOMMOSFET N-CH 80V 110A TO220
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メーカーRFE/フューゼテック
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メーカー品番 #STP110N8F6
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データシート STP110N8F6 DataSheet
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在庫状況7763
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Series | STripFET™ F6 |
| Part Status | Obsolete |
| Base Product Number | STP110 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 80 V |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 55A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 9130 pF @ 40 V |
| Power Dissipation (Max) | 200W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220 |
| Package | TO-220-3 |
| Packaging | Tube |
概要
Description
This MOSFET is part of the SuperMESH™ series by STMicroelectronics, which is known for its excellent breakdown voltage and efficient switching capabilities. With a drain-source voltage rating of around 80V and a continuous drain current handling capacity of approximately 110A, it is suitable for high-power applications.
The STP110N8F6 is encapsulated in a TO-220 package, facilitating easy mounting and heat dissipation. Its robust design provides reliability under varied thermal and electrical conditions. Overall, this MOSFET is favored for its performance, efficiency, and reliability in demanding power electronic circuits.
Equivalent
Features
1. N-Channel MOSFET: This device utilizes N-channel technology, offering efficient and fast switching capabilities.
2. Voltage and Current Ratings: It typically supports a drain-source voltage (V_DS) of 80V and a continuous drain current (I_D) of up to 110A.
3. R_DS(on): The on-resistance is low, which minimizes power losses during operation, contributing to higher efficiency.
4. Package: Commonly available in a TO-220 package, which provides good thermal performance and ease of handling for various applications.
5. Applications: It is well-suited for use in power management, motor control, DC-DC converters, and synchronous rectification in power supplies.
6. Thermal Performance: The device offers excellent thermal performance, making it suitable for high-power applications.
7. Enhanced Efficiency: With fast switching speeds and low on-state resistance, the STP110N8F6 enhances the efficiency of power electronic systems.
These features make it a robust choice for designers seeking a reliable and efficient MOSFET for their power electronic designs.
Pinout
1. Gate (G): This pin is used to control the MOSFET. It receives the voltage signal that turns the MOSFET on or off.
2. Drain (D): This is the output pin where the current flows out. It is connected to the load in a circuit.
3. Source (S): This pin is connected to the source of the input current. It is usually connected to the ground or the negative side of the power supply.
The STP110N8F6 is designed for high efficiency in power applications and features low on-state resistance, fast switching, and a high current handling capability, making it suitable for various applications, including power management and motor control.
Manufacturer
The company is known for producing a broad spectrum of products, including microcontrollers, sensors, power management devices, and other semiconductor components. STMicroelectronics is headquartered in Geneva, Switzerland, and operates globally, with a significant presence in Europe, Asia, and the Americas. It focuses on innovation and sustainability, aiming to provide technologies that support smarter mobility, more efficient power and energy management, and the Internet of Things (IoT).
Application
1. Power Supply Units (PSUs): Utilized in both AC-DC and DC-DC converters for improved efficiency.
2. Motor Control: Suitable for driving motors in industrial and automotive systems due to its high current capacity.
3. Renewable Energy Systems: Implemented in solar inverters and other energy conversion systems.
4. Load Switches: Used in smart load management for consumer electronics and computing.
5. Lighting Systems: Employed in LED drivers for efficient light regulation.
Its low on-resistance and fast switching capabilities make it ideal for these applications.
Package
Frequently Asked Questions
Q: What is the maximum drain-source voltage for the STP110N8F6?
A: The maximum drain-to-source voltage (Vdss) is 80V, making it suitable for high-voltage switching applications.
Q: What is the maximum continuous drain current at 25°C?
A: It can handle a continuous drain current (Id) of 110A at a case temperature (Tc) of 25°C.
Q: How does this MOSFET handle switching frequencies?
A: With a low gate charge (Qg) of 150nC at 10V, it offers efficient high-frequency switching performance.
Q: What is the typical on-resistance for this device?
A: The maximum Rds(on) is 6.5mOhm at a drain current of 55A and a gate drive voltage of 10V.
Q: What is the recommended gate drive voltage?
A: A gate drive voltage of 10V is required to achieve the specified low on-resistance (Rds(on)).
Q: What package type is this MOSFET available in?
A: It comes in a TO-220-3 through-hole package, ideal for power applications requiring robust thermal management.
Q: Can this device be used in automotive or harsh environments?
A: Yes, its operating temperature range is -55°C to 175°C (junction), suitable for extreme environments.
Q: What is the maximum power dissipation capability?
A: The maximum power dissipation is 200W at case temperature (Tc), requiring adequate heatsinking.
