Part A
2N7002,215
ネクスペリアUSA株式会社
- Lifecycle
- Active
- Stock
- 6582 個数
- Package
- SOT-23-3
- Series
- トランジスタ - FET、MOSFET - シングル
Replacement verdict
Compatible functional replacement candidate
The 2N7002 and 2N7002,215 are functionally equivalent N-channel enhancement-mode MOSFETs sharing the same SOT-23 package, 60 V drain-source voltage rating, and 300 mA continuous drain current capability. The 2N7002,215 is the tape-and-reel orderable variant of the 2N7002 from Nexperia, making it a direct drop-in replacement for automated assembly processes. Designers should verify gate threshold voltage distribution and thermal derating for their specific application before final qualification.
Package Type
High match
Drain-Source Voltage Rating
High match
Continuous Drain Current
High match
Gate Threshold Voltage
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Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | 2N7002,215 | 2N7002 |
|---|---|---|
| Series | TrenchMOS™ | STripFET™ |
| Part Status | Active | Obsolete |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 300mA (Ta) | 200mA (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 5Ohm @ 500mA, 10V | 5Ohm @ 500mA, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA | 3V @ 250µA |
| Vgs(Max) | ±30V | ±18V |
| Input Capacitance(Ciss)(Max) @ Vds | 50 pF @ 10 V | 43 pF @ 25 V |
| Power Dissipation (Max) | 830mW (Ta) | 350mW (Tc) |
| Operating Temperature | -65°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Gate Charge(Qg)(Max) @ Vgs | - | 2 nC @ 5 V |