2N7002,215 vs 2N7002DW

The 2N7002DW is a dual N-channel MOSFET offered in a single package, while the 2N7002,215 is a single N-channel MOSFET in a SOT-23 (TO-236AB) package. The 2N7002DW integrates two electrically isolated MOSFETs, whereas the 2N7002,215 contains only one. Both share similar voltage and current ratings per transistor, but the 2N7002DW is intended for applications requiring two switches in a compact footprint.

No. While both are based on the 2N7002 N-channel MOSFET die, the 2N7002DW contains two matched transistors with shared package thermal characteristics, and the 2N7002,215 is a single transistor. Key parameters such as drain-source voltage (60 V), continuous drain current (typically 115 mA for the 2N7002,215 and 300 mA per transistor for some 2N7002DW variants) and RDS(on) may differ between manufacturers and specific part versions. Always consult the respective manufacturer datasheet for exact ratings.

Not directly. The 2N7002DW is a dual device in a larger package (often SOT-363 or SOIC-8), while the 2N7002,215 is a single SOT-23 device. Pinouts, footprint, and PCB land patterns differ. Substitution requires verifying that the dual package can accommodate the single-transistor function, that unused transistor pins are properly terminated, and that electrical ratings meet the target design. Manufacturer documentation must be consulted before any substitution.

The 2N7002,215 is commonly supplied in a SOT-23 (TO-236AB) 3-pin package. The 2N7002DW is typically offered in a 6-pin package such as SOT-363 (SC-88) or SOIC-8, depending on the manufacturer. Package choice affects thermal resistance, power dissipation, and PCB area. Verify the exact package suffix in the manufacturer datasheet because different suppliers may use different package codes.

Both the 2N7002DW and 2N7002,215 are generally rated for a maximum drain-source voltage (VDS) of 60 V. Continuous drain current (ID) for the 2N7002,215 is typically 115 mA at 25°C, while the 2N7002DW may be rated at 300 mA per transistor or lower depending on the package and manufacturer. These values are not universal; always confirm the exact ratings from the specific manufacturer datasheet because ratings can vary by production site and package.

The 2N7002DW is generally preferred when two N-channel MOSFETs are needed in a compact area, as it integrates both transistors in one package and reduces component count and board space compared to using two separate 2N7002,215 devices. However, the designer must verify that the dual package footprint, thermal performance, and per-transistor ratings meet the application requirements.

No. The 2N7002,215 in SOT-23 has three pins: gate, source, and drain. The 2N7002DW in a 6-pin package has two separate MOSFETs, each with its own gate, source, and drain, plus possibly common or separate source connections depending on the manufacturer. Pinouts are not interchangeable, and PCB layout must match the specific package and pin assignment from the datasheet.

Gate threshold voltage (VGS(th)) and on-resistance (RDS(on)) can differ between the 2N7002DW and 2N7002,215 because they may be produced with different die or package thermal conditions. Typical VGS(th) for both is in the range of 1.0 V to 2.5 V, and RDS(on) is typically a few ohms at VGS = 10 V and low drain current. However, these parameters are not guaranteed to be identical across manufacturers or part variants. Always use the specific datasheet values for design calculations.