2N7002,215 vs 2N7002LT1G

2N7002,215と2N7002LT1Gの詳細な比較では、それぞれの仕様と主要機能に関する貴重な洞察を提供します。RoHS指令への準拠、REACH規則、シリーズ、実装スタイル、パッケージタイプ、その他の関連特性など、重要な要素を詳細に網羅しています。違いを並べて表示することで、部品選定が容易になり、特定のアプリケーションに最適なオプションを選択しやすくなります。

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002LT1G and 2N7002,215 are functionally equivalent N-channel MOSFETs with matching voltage, current, and package ratings, making them suitable drop-in replacements for most designs. Minor differences in package marking and supplier-specific specifications should be validated against the target application requirements.

Drain-Source Voltage Rating High match

Continuous Drain Current High match

Package Type High match

On-Resistance Validation required

Review the critical differences →

Parts at a glance

Part A

2N7002,215

ネクスペリアUSA株式会社

Lifecycle: Active
Stock: 6582 個数
Package: SOT-23-3
Series: トランジスタ - FET、MOSFET - シングル

+BOM 見積依頼

Part B

2N7002LT1G

オンセミコンダクター社

Lifecycle: Active
Stock: 7047 個数
Package: SOT-23-3
Series: トランジスタ - FET、MOSFET - シングル

+BOM 見積依頼

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Send your BOM and application constraints for technical and sourcing review.

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	2N7002,215	2N7002LT1G
Series	TrenchMOS™	-
Part Status	Active	Active
FET Type	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V	60 V
Current - Continuous Drain(Id) @ 25°C	300mA (Ta)	115mA (Tc)
Drive Voltage(Max Rds On Min Rds On)	10V	5V, 10V
Rds On(Max) @ Id Vgs	5Ohm @ 500mA, 10V	7.5Ohm @ 500mA, 10V
Vgs(th)(Max) @ Id	2.5V @ 250µA	2.5V @ 250µA
Vgs(Max)	±30V	±20V
Input Capacitance(Ciss)(Max) @ Vds	50 pF @ 10 V	50 pF @ 25 V
Power Dissipation (Max)	830mW (Ta)	225mW (Ta)
Operating Temperature	-65°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount

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