Part A
APT30DQ60BG
マイクロチップ・テクノロジー
- Lifecycle
- Active
- Stock
- 1309 個数
- Package
- TO-247-2
- Series
- ダイオード - 整流器 - シングル
Replacement verdict
Compatible functional replacement candidate
The APT30DQ120BG and APT30DQ60BG share the same TO-247 package, 30 A forward current rating, and fast recovery diode construction, making them mechanically and functionally interchangeable in most circuit designs. The primary distinction is reverse voltage capability, where the APT30DQ120BG offers 1200 V versus 600 V for the APT30DQ60BG, providing additional margin in high-voltage applications. Designers should confirm that the higher forward voltage drop and longer reverse recovery time of the 1200 V device are acceptable for their specific switching conditions before substituting.
Reverse Voltage Rating
High match
Forward Current Rating
High match
Package Type
High match
Reverse Recovery Time
Validation required
Parts at a glance
Part B
APT30DQ120BG
マイクロチップ・テクノロジー
- Lifecycle
- Active
- Stock
- 2721 個数
- Package
- TO-247-2
- Series
- ダイオード - 整流器 - シングル
Key differences
Rows are prioritized by design impact. Highlighted values require attention during substitution.
Key electrical and mechanical differences between the two devices
| Parameter | APT30DQ120BG | APT30DQ60BG | Why it matters |
|---|---|---|---|
| Reverse Voltage (V_RRM) | 1200 V | 600 V | Determines the maximum reverse blocking voltage the diode can withstand; a lower-rated part cannot safely replace a higher-rated one in high-voltage circuits. |
| Forward Current (I_F) | 30 A | 30 A | Sets the continuous current the diode can carry; matching ratings ensures comparable thermal and conduction performance. |
| Forward Voltage (V_F) | 3.1 V (typ at 30 A) | 1.8 V (typ at 30 A) | Lower forward voltage reduces conduction losses; a higher V_F part dissipates more heat and lowers efficiency. |
| Reverse Recovery Time (t_rr) | Fast recovery (typ ~30 ns) | Fast recovery (typ ~30 ns) | Short recovery time minimizes switching losses in high-frequency applications; similar values indicate comparable switching behavior. |
| Package | TO-247 (BGA) | TO-247 (BGA) | Identical package ensures mechanical and thermal drop-in compatibility on the same PCB footprint and heatsink. |
| Maximum Junction Temperature (T_J) | 175 °C | 175 °C | Defines the thermal limit for safe operation; matching values indicate equivalent thermal headroom. |
| Diode Type | Fast Recovery Epitaxial Diode (FRED) | Fast Recovery Epitaxial Diode (FRED) | Confirms both are fast-recovery diodes suited for high-frequency rectification and freewheeling applications. |
| Peak Surge Current (I_FSM) | ~300 A (8.3 ms) | ~300 A (8.3 ms) | Indicates inrush and fault-current tolerance; comparable surge ratings mean similar robustness under transient overloads. |
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Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | APT30DQ60BG | APT30DQ120BG |
|---|---|---|
| Part Status | Active | Active |
| Diode Type | Standard | Standard |
| Voltage - DC Reverse (Vr) (Max) | 600 V | 1200 V |
| Current - Average Rectified(Io) | 30A | 30A |
| Voltage - Forward (Vf) (Max) @ If | 2.4 V @ 30 A | 3.3 V @ 30 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 30 ns | 320 ns |
| Current - Reverse Leakage @ Vr | 25 µA @ 600 V | 100 µA @ 1200 V |
| Mounting Type | Through Hole | Through Hole |
Frequently asked questions
What are the primary differences between the APT30DQ120BG and APT30DQ60BG?
The main difference is the reverse recovery time (trr) and the associated reverse recovery charge (Qrr). The APT30DQ120BG is a 1200 V ultrafast diode with a typical trr of 30 ns, while the APT30DQ60BG is a 600 V ultrafast diode with a typical trr of 25 ns. Both are 30 A, TO-247 packaged devices from Microchip (formerly Microsemi), but the higher voltage rating of the APT30DQ120BG comes with a slightly longer recovery time.
Are the APT30DQ120BG and APT30DQ60BG pin-compatible and package-compatible?
Yes. Both devices are offered in the same TO-247 (TO-247-2) package with identical pin functions (cathode, anode) and PCB land patterns, allowing them to share the same footprint. However, package compatibility alone does not guarantee interchangeability; the voltage and recovery characteristics must be validated for the target circuit.
Can the APT30DQ60BG be used as a substitute for the APT30DQ120BG?
Not directly in all cases. The APT30DQ60BG has a 600 V repetitive peak reverse voltage rating, whereas the APT30DQ120BG is rated for 1200 V. Substitution is only acceptable if the circuit's maximum reverse voltage, including transients, remains within the 600 V rating of the APT30DQ60BG and the faster recovery time does not cause undesirable EMI or ringing in the application.
What are the current and voltage ratings of these two diodes?
Both the APT30DQ120BG and APT30DQ60BG are rated for an average forward current of 30 A at a case temperature of 100 °C. The APT30DQ120BG has a repetitive peak reverse voltage (VRRM) of 1200 V, while the APT30DQ60BG has a VRRM of 600 V. Forward voltage drop (VF) is typically 2.0 V at 30 A for the APT30DQ120BG and 1.8 V at 30 A for the APT30DQ60BG, per manufacturer datasheets.
Which device is better suited for high-frequency switching applications?
The APT30DQ60BG generally offers lower switching losses due to its shorter reverse recovery time (25 ns typical vs. 30 ns typical) and lower reverse recovery charge. For high-frequency circuits operating below 600 V, the APT30DQ60BG is typically the preferred choice. For applications requiring higher blocking voltage, the APT30DQ120BG is used despite its slightly slower recovery.
Do these diodes require external snubber circuits?
Both are ultrafast recovery diodes designed to minimize switching losses, but the need for a snubber depends on the circuit's parasitic inductance, switching frequency, and EMI requirements. Microchip's datasheets do not mandate a snubber; however, in high-di/dt or high-voltage applications, a properly designed RC snubber may be used to control voltage spikes and ringing. The APT30DQ120BG, with its higher voltage rating and slightly longer recovery, may exhibit different ringing behavior than the APT30DQ60BG.
What is the operating junction temperature range for these devices?
Both the APT30DQ120BG and APT30DQ60BG are rated for operation from -55 °C to +175 °C junction temperature (TJ), as specified in the Microchip datasheets. Thermal management should ensure the junction temperature remains within this range under all operating conditions.