Part A
APT30DQ60BG
マイクロチップ・テクノロジー
- Lifecycle
- Active
- Stock
- 1309 個数
- Package
- TO-247-2
- Series
- ダイオード - 整流器 - シングル
Parts at a glance
Part B
APT30GT60KRG
マイクロセミコーポレーション
- Lifecycle
- Active
- Stock
- 8680 個数
- Package
- TO-220-3
- Series
- トランジスタ - IGBT - シングル
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Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | APT30DQ60BG | APT30GT60KRG |
|---|---|---|
| Supplier | - | Microchip Technology |
| Series | - | Thunderbolt IGBT® |
| Part Status | Active | Obsolete |
| IGBT Type | - | NPT |
| Voltage - Collector Emitter Breakdown(Max) | - | 600 V |
| Current - Collector(Ic)(Max) | - | 64 A |
| Current - Collector Pulsed(Icm) | - | 110 A |
| Vce(on)(Max) @ Vge Ic | - | 2.5V @ 15V, 30A |
| Power - Max | - | 250 W |
| Switching Energy | - | 525µJ (on), 600µJ (off) |
| Input Type | - | Standard |
| Gate Charge | - | 145 nC |
| Td(on / off) @ 25°C | - | 12ns/225ns |
| Test Condition | - | 400V, 30A, 10Ohm, 15V |
| Operating Temperature | - | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Through Hole |
| Diode Type | Standard | - |
| Voltage - DC Reverse (Vr) (Max) | 600 V | - |
| Current - Average Rectified(Io) | 30A | - |
| Voltage - Forward (Vf) (Max) @ If | 2.4 V @ 30 A | - |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | - |
| Reverse Recovery Time (trr) | 30 ns | - |
| Current - Reverse Leakage @ Vr | 25 µA @ 600 V | - |