Part A
FDG6303N
オンセミコンダクター社
- Lifecycle
- Active
- Stock
- 6717 個数
- Series
- トランジスタ - FET、MOSFET - FET、MOSFETアレイ
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Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | FDG6303N | FDG6301N |
|---|---|---|
| Part Status | Obsolete | Obsolete |
| Base Product Number | FDG6303 | FDG6301 |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 25V | 25V |
| Current - Continuous Drain (Id) @ 25°C | 500mA | 220mA |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 500mA, 4.5V | 4Ohm @ 220mA, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 2.3nC @ 4.5V | 0.4nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 10V | 9.5pF @ 10V |
| Power - Max | 300mW | 300mW |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Packaging | Cut Tape (CT), Tape & Reel (TR) | Cut Tape (CT), Tape & Reel (TR) |