Part A
FDG6301N
オンセミコンダクター社
- Lifecycle
- Active
- Stock
- 7191 個数
- Series
- トランジスタ - FET、MOSFET - FET、MOSFETアレイ
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Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | FDG6301N | FDG6313N |
|---|---|---|
| Supplier | - | Rochester Electronics, LLC |
| Part Status | Obsolete | Active |
| Base Product Number | FDG6301 | - |
| Technology | MOSFET (Metal Oxide) | - |
| Configuration | 2 N-Channel (Dual) | - |
| FET Feature | Logic Level Gate | - |
| Drain to Source Voltage (Vdss) | 25V | - |
| Current - Continuous Drain (Id) @ 25°C | 220mA | - |
| Rds On (Max) @ Id, Vgs | 4Ohm @ 220mA, 4.5V | - |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA | - |
| Gate Charge (Qg) (Max) @ Vgs | 0.4nC @ 4.5V | - |
| Input Capacitance (Ciss) (Max) @ Vds | 9.5pF @ 10V | - |
| Power - Max | 300mW | - |
| Operating Temperature | -55°C ~ 150°C (TJ) | - |
| Mounting Type | Surface Mount | - |
| Packaging | Cut Tape (CT), Tape & Reel (TR) | - |