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STH275N8F7-6AG
+BOMMOSFET N-CH 80V 180A H2PAK-6
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メーカーRFE/フューゼテック
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メーカー品番 #STH275N8F7-6AG
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データシート STH275N8F7-6AG DataSheet
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在庫状況7528
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Series | STripFET™ F7 |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 80 V |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 2.1mOhm @ 90A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 193 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 13600 pF @ 50 V |
| Power Dissipation (Max) | 315W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Supplier Device Package | H2PAK-6 |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Base Product Number | STH275 |
概要
Description
Additionally, the STH275N8F7-6AG is packaged in a TO-220 form factor, facilitating easy heat dissipation and mounting in electronic assemblies. The MOSFET's gate threshold voltage is optimized for low drive requirements, enhancing its suitability for microcontroller applications. Overall, the STH275N8F7-6AG combines robust performance with efficiency, making it a popular choice in modern power electronics designs.
Equivalent
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 75V, making it suitable for various power circuits.
2. Current Rating: Supports a continuous drain current (I_D) of 275A, enabling it to handle high load conditions.
3. R_DS(on): Low on-state resistance (R_DS(on)) of around 6.5 mΩ, which minimizes power loss and enhances thermal performance.
4. Package: Offered in a TO-220 package, facilitating efficient heat dissipation and easy mounting on heatsinks.
5. Fast Switching: Designed for low gate charge, allowing for rapid switching speeds, which is beneficial in high-frequency applications.
6. Thermal Resistance: Features low thermal resistance, enhancing its reliability in demanding environments.
Overall, the STH275N8F7-6AG is ideal for use in power management, motor control, and DC-DC converters.
Pinout
1. Gate (G): The gate pin controls the MOSFET's operation, allowing it to switch on or off based on the input voltage applied to this pin.
2. Drain (D): The drain pin is where the load is connected. It is the terminal through which the current flows out of the MOSFET when it is on.
3. Source (S): The source pin is connected to the ground or the negative side of the power supply, serving as the return path for the current.
The STH275N8F7-6AG is designed for high-efficiency applications, with a maximum drain-source voltage of 80V and a continuous drain current rating of up to 275A, making it suitable for power management and switching applications.
Manufacturer
STMicroelectronics plays a significant role in the semiconductor industry, focusing on developing high-performance solutions and technologies that enable smart and efficient electronic systems. With a commitment to sustainability and technological advancement, STMicroelectronics aims to meet the evolving demands of the electronics market, supporting applications ranging from energy-efficient systems to the Internet of Things (IoT).
Application
1. Switching Power Supplies - For efficient conversion and regulation of voltage.
2. DC-DC Converters - In both buck and boost configurations.
3. Motor Drives - In industrial and automotive applications.
4. Power Amplifiers - For RF applications.
5. LED Drivers - For efficient lighting solutions.
6. Battery Management Systems - In energy storage devices.
Its low on-resistance and high-speed switching capabilities make it suitable for high-efficiency designs.