STH275N8F7-6AG

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STH275N8F7-6AG

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MOSFET N-CH 80V 180A H2PAK-6

  • メーカーRFE/フューゼテック

  • メーカー品番 #STH275N8F7-6AG

  • データシート STH275N8F7-6AG DataSheet

  • 在庫状況7528

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仕様

属性 値
Series STripFET™ F7
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.1mOhm @ 90A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 193 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 13600 pF @ 50 V
Power Dissipation (Max) 315W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package H2PAK-6
Package / Case TO-263-7, D2PAK (6 Leads + Tab)
Base Product Number STH275

概要

Description

STH275N8F7-6AG is a high-performance N-channel MOSFET transistor designed for power management applications. It features a low on-resistance of 0.008 ohms, making it efficient for various electronic circuits, particularly in power supply systems, DC-DC converters, and motor control applications. The device is capable of handling high currents, typically up to 275A, and has a maximum voltage rating of 80V, enabling it to operate effectively in demanding environments.
Additionally, the STH275N8F7-6AG is packaged in a TO-220 form factor, facilitating easy heat dissipation and mounting in electronic assemblies. The MOSFET's gate threshold voltage is optimized for low drive requirements, enhancing its suitability for microcontroller applications. Overall, the STH275N8F7-6AG combines robust performance with efficiency, making it a popular choice in modern power electronics designs.

Equivalent

The STH275N8F7-6AG is a N-channel MOSFET. Equivalent products include the STP275N8F7, IRF275, and BUK9Y275-100. Always verify the specifications such as voltage, current ratings, and RDS(on) to ensure compatibility in your specific application.

Features

The STH275N8F7-6AG is an N-channel MOSFET designed for high efficiency in power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 75V, making it suitable for various power circuits.
2. Current Rating: Supports a continuous drain current (I_D) of 275A, enabling it to handle high load conditions.
3. R_DS(on): Low on-state resistance (R_DS(on)) of around 6.5 mΩ, which minimizes power loss and enhances thermal performance.
4. Package: Offered in a TO-220 package, facilitating efficient heat dissipation and easy mounting on heatsinks.
5. Fast Switching: Designed for low gate charge, allowing for rapid switching speeds, which is beneficial in high-frequency applications.
6. Thermal Resistance: Features low thermal resistance, enhancing its reliability in demanding environments.
Overall, the STH275N8F7-6AG is ideal for use in power management, motor control, and DC-DC converters.

Pinout

The STH275N8F7-6AG is an N-channel MOSFET manufactured by STMicroelectronics. It features a total of 3 pins. The primary functions of these pins are as follows:
1. Gate (G): The gate pin controls the MOSFET's operation, allowing it to switch on or off based on the input voltage applied to this pin.
2. Drain (D): The drain pin is where the load is connected. It is the terminal through which the current flows out of the MOSFET when it is on.
3. Source (S): The source pin is connected to the ground or the negative side of the power supply, serving as the return path for the current.
The STH275N8F7-6AG is designed for high-efficiency applications, with a maximum drain-source voltage of 80V and a continuous drain current rating of up to 275A, making it suitable for power management and switching applications.

Manufacturer

The STH275N8F7-6AG is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics specializes in a wide range of electronic components, including integrated circuits, sensors, and power management devices. Founded in 1987, the company is headquartered in Geneva, Switzerland, and is recognized for its innovation in various sectors, including automotive, industrial, personal electronics, and telecommunications.
STMicroelectronics plays a significant role in the semiconductor industry, focusing on developing high-performance solutions and technologies that enable smart and efficient electronic systems. With a commitment to sustainability and technological advancement, STMicroelectronics aims to meet the evolving demands of the electronics market, supporting applications ranging from energy-efficient systems to the Internet of Things (IoT).

Application

The STH275N8F7-6AG is a high-performance N-channel MOSFET primarily used in power management applications. Its application areas include:
1. Switching Power Supplies - For efficient conversion and regulation of voltage.
2. DC-DC Converters - In both buck and boost configurations.
3. Motor Drives - In industrial and automotive applications.
4. Power Amplifiers - For RF applications.
5. LED Drivers - For efficient lighting solutions.
6. Battery Management Systems - In energy storage devices.
Its low on-resistance and high-speed switching capabilities make it suitable for high-efficiency designs.

Package

The STH275N8F7-6AG is packaged in a DPAK (also known as TO-252) format. This surface-mount package is designed for efficient thermal performance and is commonly used in power applications.

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