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STP7NK80Z
+BOMMOSFET N-CH 800V 5.2A TO220AB
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メーカーRFE/フューゼテック
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メーカー品番 #STP7NK80Z
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データシート STP7NK80Z DataSheet
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在庫状況8266
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Series | SuperMESH™ |
| PartStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 800 V |
| Current-ContinuousDrain(Id)@25°C | 5.2A (Tc) |
| DriveVoltage(MaxRdsOn,MinRdsOn) | 10V |
| RdsOn(Max)@Id,Vgs | 1.8Ohm @ 2.6A, 10V |
| Vgs(th)(Max)@Id | 4.5V @ 100µA |
| GateCharge(Qg)(Max)@Vgs | 56 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 1138 pF @ 25 V |
| PowerDissipation(Max) | 125W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220 |
| Package/Case | TO-220-3 |
| BaseProductNumber | STP7NK80 |
概要
Description
The device is characterized by low on-resistance (Rds(on)), which minimizes power losses during operation, enhancing efficiency in power conversion applications. It has a gate threshold voltage (Vgs(th)) that allows for easy drive from standard voltage levels, providing flexibility in circuit design.
The STP7NK80Z is housed in a TO-220 package, which aids in heat dissipation, allowing it to operate effectively in demanding environments. Its fast switching capabilities make it ideal for applications that require rapid on-off control, such as inverters, power supplies, and automotive systems.
Overall, the STP7NK80Z is a robust choice for designers looking for high-performance MOSFETs in high-voltage applications.
Equivalent
Features
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 800V.
2. Current Rating: The continuous drain current (I_D) is rated at 7A, suitable for various power control applications.
3. R_DS(on): It has a low on-resistance, typically around 0.8 ohms, which minimizes power loss during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 2V to 4V, allowing efficient switching.
5. Package: Available in a TO-220 package, facilitating effective heat dissipation.
6. Fast Switching: Designed for high-speed applications, making it suitable for switching power supplies and other electronic circuits.
7. Thermal Resistance: Offers good thermal management, allowing for operation in demanding environments.
These features make the STP7NK80Z ideal for applications in power converters, motor drives, and industrial equipment.
Pinout
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is the output terminal where the current flows out when the MOSFET is turned on.
3. Source (S): This pin is the input terminal where the current enters the MOSFET.
The device is designed for high-voltage applications, with a maximum drain-source voltage of 800V and a continuous drain current of up to 7A. It is commonly used in power management, switch-mode power supplies, and motor control applications.
Manufacturer
Founded in 1987 and headquartered in Geneva, Switzerland, STMicroelectronics is known for its innovation and commitment to sustainability. It plays a significant role in the development of technologies for the Internet of Things (IoT), automotive applications, and energy-efficient solutions. The STP7NK80Z itself is a power MOSFET designed for high-voltage applications, making it suitable for use in power supplies, motor drivers, and other electronic circuits.
Application
1. Power Supplies: Utilized in switch-mode power supplies for efficient voltage regulation.
2. Motor Control: Employed in brushless DC motors and other motor drive circuits.
3. Lighting: Used in LED drivers and lighting control systems.
4. Inverters: Functions in photovoltaic and UPS inverters for renewable energy applications.
5. Automotive: Applicable in automotive power management systems for improved efficiency.
Overall, its high voltage and current handling make it suitable for various power electronics applications.