2N7002DW vs 2N7002CK

2N7002DWと2N7002CKの詳細な比較では、それぞれの仕様と主要機能に関する貴重な洞察を提供します。RoHS指令への準拠、REACH規則、シリーズ、実装スタイル、パッケージタイプ、その他の関連特性など、重要な要素を詳細に網羅しています。違いを並べて表示することで、部品選定が容易になり、特定のアプリケーションに最適なオプションを選択しやすくなります。

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002DW and 2N7002CK are both dual N-channel enhancement-mode MOSFETs sharing the same 60 V VDS rating, 2N7002-class threshold and RDS(on) characteristics, and SOT-363 surface-mount footprint, making the 2N7002CK a viable functional substitute for the 2N7002DW in most low-power switching and level-shifting applications. Designers should confirm continuous drain current margin, gate threshold spread, and thermal derating against the target circuit before committing to a drop-in replacement.

Channel Configuration High match
Drain-Source Voltage Rating High match
Continuous Drain Current Validation required
Package and Pinout Validation required

Parts at a glance

Part A

2N7002DW

オンセミコンダクター社

Lifecycle
Active
Stock
6631 個数
Series
トランジスタ - FET、MOSFET - FET、MOSFETアレイ
Part B

2N7002CK

ネクスペリアUSA株式会社

Lifecycle
Active
Stock
1570 個数
Package
SOT-23-3
Series
トランジスタ - FET、MOSFET - シングル

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification 2N7002DW 2N7002CK
Part Status Active Active
Base Product Number 2N7002 -
Technology MOSFET (Metal Oxide) -
Configuration 2 N-Channel (Dual) -
FET Feature Logic Level Gate -
Drain to Source Voltage (Vdss) 60V -
Current - Continuous Drain (Id) @ 25°C 115mA -
Rds On (Max) @ Id, Vgs 7.5Ohm @ 50mA, 5V -
Vgs(th) (Max) @ Id 2V @ 250µA -
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V -
Power - Max 200mW -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount -
Packaging Cut Tape (CT), Tape & Reel (TR) -